Direct observation of phase transition in Hf0.5Zr0.5O2 thin films affected by top electrodes using in-situ STEM heating

Direct observation of phase transition in Hf0.5Zr0.5O2 thin films affected by top electrodes using in-situ STEM heating

High-scalability HfO2-based ferroelectric thin films are promising for application in fast, energy-efficient, and high-density non-volatile memories. This ferroelectricity is believed to originate from the metastable orthorhombic phase, which is difficult to obtain. Post-metallization annealing with...

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Bibliographic Details
Main Authors: Qijun Yang, Siwei Dai, Changfan Ju, Keyu Bao, Binjian Zeng, Shuaizhi Zheng, Jiajia Liao, Jiangang Guo, Sirui Zhang, Yichun Zhou, Min Liao
Format: Article
Language:English
Published: Elsevier 2025-09-01
Series:Journal of Materiomics
Subjects:
Hf0.5Zr0.5O2 ferroelectric thin films
In-situ STEM
Phase transition
Top electrode
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847825000656
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