Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors

Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors

We demonstrate the impact of semiconductor/oxide interface traps (ITs) on the DC and AC characteristics of tunnel field-effect transistors (TFETs). Using the Sentaurus simulation tools, we show the impacts of trap density distribution and trap type on the n-type double gate- (DG-) TFET. The results...

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Bibliographic Details
Main Authors: Zhi Jiang, Yiqi Zhuang, Cong Li, Ping Wang, Yuqi Liu
Format: Article
Language:English
Published: Wiley 2015-01-01
Series:Journal of Electrical and Computer Engineering
Online Access:http://dx.doi.org/10.1155/2015/630178
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