Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors
We demonstrate the impact of semiconductor/oxide interface traps (ITs) on the DC and AC characteristics of tunnel field-effect transistors (TFETs). Using the Sentaurus simulation tools, we show the impacts of trap density distribution and trap type on the n-type double gate- (DG-) TFET. The results...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Journal of Electrical and Computer Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/630178 |
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| author | Zhi Jiang Yiqi Zhuang Cong Li Ping Wang Yuqi Liu |
| author_facet | Zhi Jiang Yiqi Zhuang Cong Li Ping Wang Yuqi Liu |
| author_sort | Zhi Jiang |
| collection | DOAJ |
| description | We demonstrate the impact of semiconductor/oxide interface traps (ITs) on the DC and AC characteristics of tunnel field-effect transistors (TFETs). Using the Sentaurus simulation tools, we show the impacts of trap density distribution and trap type on the n-type double gate- (DG-) TFET. The results show that the donor-type and acceptor-type ITs have the great influence on DC characteristic at midgap. Donor-like and acceptor-like ITs have different mechanism of the turn-on characteristics. The flat band shift changes obviously and differently in the AC analysis, which results in contrast of peak shift of Miller capacitor Cgd for n-type TFETs with donor-like and acceptor-like ITs. |
| format | Article |
| id | doaj-art-fed3caec0ff04386ba6e4202236152ea |
| institution | OA Journals |
| issn | 2090-0147 2090-0155 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Electrical and Computer Engineering |
| spelling | doaj-art-fed3caec0ff04386ba6e4202236152ea2025-08-20T02:22:45ZengWileyJournal of Electrical and Computer Engineering2090-01472090-01552015-01-01201510.1155/2015/630178630178Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect TransistorsZhi Jiang0Yiqi Zhuang1Cong Li2Ping Wang3Yuqi Liu4School of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaWe demonstrate the impact of semiconductor/oxide interface traps (ITs) on the DC and AC characteristics of tunnel field-effect transistors (TFETs). Using the Sentaurus simulation tools, we show the impacts of trap density distribution and trap type on the n-type double gate- (DG-) TFET. The results show that the donor-type and acceptor-type ITs have the great influence on DC characteristic at midgap. Donor-like and acceptor-like ITs have different mechanism of the turn-on characteristics. The flat band shift changes obviously and differently in the AC analysis, which results in contrast of peak shift of Miller capacitor Cgd for n-type TFETs with donor-like and acceptor-like ITs.http://dx.doi.org/10.1155/2015/630178 |
| spellingShingle | Zhi Jiang Yiqi Zhuang Cong Li Ping Wang Yuqi Liu Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors Journal of Electrical and Computer Engineering |
| title | Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors |
| title_full | Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors |
| title_fullStr | Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors |
| title_full_unstemmed | Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors |
| title_short | Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors |
| title_sort | impact of interface traps on direct and alternating current in tunneling field effect transistors |
| url | http://dx.doi.org/10.1155/2015/630178 |
| work_keys_str_mv | AT zhijiang impactofinterfacetrapsondirectandalternatingcurrentintunnelingfieldeffecttransistors AT yiqizhuang impactofinterfacetrapsondirectandalternatingcurrentintunnelingfieldeffecttransistors AT congli impactofinterfacetrapsondirectandalternatingcurrentintunnelingfieldeffecttransistors AT pingwang impactofinterfacetrapsondirectandalternatingcurrentintunnelingfieldeffecttransistors AT yuqiliu impactofinterfacetrapsondirectandalternatingcurrentintunnelingfieldeffecttransistors |