Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review
Graphite carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C<sub>3</sub>N<sub>4</sub> materials have strong...
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| Language: | English |
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MDPI AG
2025-07-01
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| Series: | Inorganics |
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| Online Access: | https://www.mdpi.com/2304-6740/13/7/225 |
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| author | Yijie Zhang Peng Lian Xinyu Hao Li Zhang Lihua Yang Li Jiang Kaiyou Zhang Lei Liao Aimiao Qin |
| author_facet | Yijie Zhang Peng Lian Xinyu Hao Li Zhang Lihua Yang Li Jiang Kaiyou Zhang Lei Liao Aimiao Qin |
| author_sort | Yijie Zhang |
| collection | DOAJ |
| description | Graphite carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C<sub>3</sub>N<sub>4</sub> materials have strong oxidation properties and are easy to modify. The structure formation of g-C<sub>3</sub>N<sub>4</sub>-based materials makes a series of photocatalytic synthesis reactions possible and improves photocatalytic reaction activity. In this paper, the development history, structures, and performance of g-C<sub>3</sub>N<sub>4</sub> are briefly introduced, and the modification strategies of g-C<sub>3</sub>N<sub>4</sub> are summarized to improve its photocatalytic and photoelectric catalytic properties via doping, heterojunction construction, etc. The light absorption and utilization of the catalysts are also analyzed in terms of light source conditions, and the application of g-C<sub>3</sub>N<sub>4</sub> and its modified materials in photocatalysis and photocatalytic degradation is reviewed. |
| format | Article |
| id | doaj-art-fe79ce1b35a343509cea9fa36f46c225 |
| institution | DOAJ |
| issn | 2304-6740 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Inorganics |
| spelling | doaj-art-fe79ce1b35a343509cea9fa36f46c2252025-08-20T03:07:58ZengMDPI AGInorganics2304-67402025-07-0113722510.3390/inorganics13070225Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A ReviewYijie Zhang0Peng Lian1Xinyu Hao2Li Zhang3Lihua Yang4Li Jiang5Kaiyou Zhang6Lei Liao7Aimiao Qin8Key Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaKey Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaKey Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaKey Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaKey Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaKey Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaKey Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaCollege of Environmental Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaKey Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaGraphite carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C<sub>3</sub>N<sub>4</sub> materials have strong oxidation properties and are easy to modify. The structure formation of g-C<sub>3</sub>N<sub>4</sub>-based materials makes a series of photocatalytic synthesis reactions possible and improves photocatalytic reaction activity. In this paper, the development history, structures, and performance of g-C<sub>3</sub>N<sub>4</sub> are briefly introduced, and the modification strategies of g-C<sub>3</sub>N<sub>4</sub> are summarized to improve its photocatalytic and photoelectric catalytic properties via doping, heterojunction construction, etc. The light absorption and utilization of the catalysts are also analyzed in terms of light source conditions, and the application of g-C<sub>3</sub>N<sub>4</sub> and its modified materials in photocatalysis and photocatalytic degradation is reviewed.https://www.mdpi.com/2304-6740/13/7/225graphitic carbon nitridedoping modificationheterojunctionphotoelectrocatalytic |
| spellingShingle | Yijie Zhang Peng Lian Xinyu Hao Li Zhang Lihua Yang Li Jiang Kaiyou Zhang Lei Liao Aimiao Qin Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review Inorganics graphitic carbon nitride doping modification heterojunction photoelectrocatalytic |
| title | Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review |
| title_full | Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review |
| title_fullStr | Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review |
| title_full_unstemmed | Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review |
| title_short | Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review |
| title_sort | modification strategies of g c sub 3 sub n sub 4 sub based materials for enhanced photoelectrocatalytic degradation of pollutants a review |
| topic | graphitic carbon nitride doping modification heterojunction photoelectrocatalytic |
| url | https://www.mdpi.com/2304-6740/13/7/225 |
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