Modification Strategies of g-C<sub>3</sub>N<sub>4</sub>-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review

Graphite carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C<sub>3</sub>N<sub>4</sub> materials have strong...

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Main Authors: Yijie Zhang, Peng Lian, Xinyu Hao, Li Zhang, Lihua Yang, Li Jiang, Kaiyou Zhang, Lei Liao, Aimiao Qin
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Inorganics
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Online Access:https://www.mdpi.com/2304-6740/13/7/225
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Summary:Graphite carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C<sub>3</sub>N<sub>4</sub> materials have strong oxidation properties and are easy to modify. The structure formation of g-C<sub>3</sub>N<sub>4</sub>-based materials makes a series of photocatalytic synthesis reactions possible and improves photocatalytic reaction activity. In this paper, the development history, structures, and performance of g-C<sub>3</sub>N<sub>4</sub> are briefly introduced, and the modification strategies of g-C<sub>3</sub>N<sub>4</sub> are summarized to improve its photocatalytic and photoelectric catalytic properties via doping, heterojunction construction, etc. The light absorption and utilization of the catalysts are also analyzed in terms of light source conditions, and the application of g-C<sub>3</sub>N<sub>4</sub> and its modified materials in photocatalysis and photocatalytic degradation is reviewed.
ISSN:2304-6740