Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes

The simulation of 2D etching shapes such as surface profiles and out-of-roundness profiles related to various (h k 0) and (h h l) silicon plates or cross-sections is studied. The theoretical basis of the simulation is presented. The database for the simulator TENSOSIM is determined from a systematic...

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Bibliographic Details
Main Authors: C. R. Telliera, C. Hodebourg, T. G. Leblois
Format: Article
Language:English
Published: Wiley 2003-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1080/0882751031000073869
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