Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes

The simulation of 2D etching shapes such as surface profiles and out-of-roundness profiles related to various (h k 0) and (h h l) silicon plates or cross-sections is studied. The theoretical basis of the simulation is presented. The database for the simulator TENSOSIM is determined from a systematic...

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Main Authors: C. R. Telliera, C. Hodebourg, T. G. Leblois
Format: Article
Language:English
Published: Wiley 2003-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1080/0882751031000073869
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author C. R. Telliera
C. Hodebourg
T. G. Leblois
author_facet C. R. Telliera
C. Hodebourg
T. G. Leblois
author_sort C. R. Telliera
collection DOAJ
description The simulation of 2D etching shapes such as surface profiles and out-of-roundness profiles related to various (h k 0) and (h h l) silicon plates or cross-sections is studied. The theoretical basis of the simulation is presented. The database for the simulator TENSOSIM is determined from a systematic analysis of experimental 2D etching shapes. Emphasis is placed on difficulties encountered in the determination procedure. Theoretical 2D etching shapes are compared with experimental shapes. A correlation between polar plots of the dissolution slowness and corresponding theoretical shapes is established. So we can conclude that the accuracy of the proposed database is sufficient for the simulation of 2D etching shapes.
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spelling doaj-art-fe550e5a518a485ea6793d7b32b6d6df2025-08-20T03:25:46ZengWileyActive and Passive Electronic Components0882-75161563-50312003-01-012629510910.1080/0882751031000073869Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching ShapesC. R. Telliera0C. Hodebourg1T. G. Leblois2Laboratoire de Chronométrie Electronique et Piézoélectricité Ecole Nationale Supérieure de Mécanique et des Microtechniques 26 chemin de l'épitaphe, Besançon cédex 25030, FranceInstitut des Microtechniques de Franche-Comté Avenue de l'observatoire, Besançon cédex 25030, FranceLaboratoire de Chronométrie Electronique et Piézoélectricité Ecole Nationale Supérieure de Mécanique et des Microtechniques 26 chemin de l'épitaphe, Besançon cédex 25030, FranceThe simulation of 2D etching shapes such as surface profiles and out-of-roundness profiles related to various (h k 0) and (h h l) silicon plates or cross-sections is studied. The theoretical basis of the simulation is presented. The database for the simulator TENSOSIM is determined from a systematic analysis of experimental 2D etching shapes. Emphasis is placed on difficulties encountered in the determination procedure. Theoretical 2D etching shapes are compared with experimental shapes. A correlation between polar plots of the dissolution slowness and corresponding theoretical shapes is established. So we can conclude that the accuracy of the proposed database is sufficient for the simulation of 2D etching shapes.http://dx.doi.org/10.1080/0882751031000073869
spellingShingle C. R. Telliera
C. Hodebourg
T. G. Leblois
Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
Active and Passive Electronic Components
title Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
title_full Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
title_fullStr Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
title_full_unstemmed Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
title_short Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
title_sort some investigations on the anisotropy of the chemical etching of h k 0 and h h i silicon plates in a naoh 35 solution part iii determination of a database for the simulator tensosim and prediction of 2d etching shapes
url http://dx.doi.org/10.1080/0882751031000073869
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