Orientation dependent resistivity scaling in mesoscopic NbP crystals
Abstract The scaling of Si transistor technology has resulted in a remarkable improvement in the performance of integrated circuits over the last decades. However, scaled transistors also require reduced electrical interconnect dimensions, which lead to greater losses and power dissipation at circui...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-025-00828-w |
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