Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors
Abstract Wafer‐scale and layered MoS2 films are grown by sulfurizing amorphous MoS2 films deposited on sapphire substrates by using a radio‐frequency sputtering system. To verify the layer numbers of the multi‐layer MoS2 films, atomic layer etchings are adopted. Wafer‐scale MoS2 film growth with goo...
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Wiley-VCH
2025-03-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400641 |
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| author | Yu‐Han Huang Zhi‐Wei Chen Chao‐Hsin Wu Po‐Tsung Lee Shih‐Yen Lin |
| author_facet | Yu‐Han Huang Zhi‐Wei Chen Chao‐Hsin Wu Po‐Tsung Lee Shih‐Yen Lin |
| author_sort | Yu‐Han Huang |
| collection | DOAJ |
| description | Abstract Wafer‐scale and layered MoS2 films are grown by sulfurizing amorphous MoS2 films deposited on sapphire substrates by using a radio‐frequency sputtering system. To verify the layer numbers of the multi‐layer MoS2 films, atomic layer etchings are adopted. Wafer‐scale MoS2 film growth with good layer number uniformity up to 30 is observed. A vertical device with 20‐layer MoS2 embedded in between Al (bottom) and Au (top) electrodes is fabricated. With different work functions of the metal electrodes, photo‐excited electrons and holes in the MoS2 layer can be separated and form photovoltaic responses. With the insertion of 5 nm MoO3 carrier transport layer between the MoS2 layer and the top Au electrode, enhanced photovoltaic responses are observed for the device. By using graphene as the carrier transport layer and MoS2 as the light absorption layer, avalanche photocurrents are observed for planar MoS2/graphene photoconductive devices. With the assist of the higher electron density in multi‐layer MoS2, an easier compensation in the loss of photo‐excited electrons and therefore, charge neutrality in the MoS2 layer can be maintained. Significant reduction in the rise/fall times from >100 ms. to <10 ms. is also observed for the planar photodetector with 10‐layer MoS2 absorption layer. |
| format | Article |
| id | doaj-art-fe4170dfc4eb4a67b97a327ce383bdc8 |
| institution | DOAJ |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Wiley-VCH |
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| series | Advanced Materials Interfaces |
| spelling | doaj-art-fe4170dfc4eb4a67b97a327ce383bdc82025-08-20T03:12:48ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-03-01125n/an/a10.1002/admi.202400641Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar PhotodetectorsYu‐Han Huang0Zhi‐Wei Chen1Chao‐Hsin Wu2Po‐Tsung Lee3Shih‐Yen Lin4Graduate Institute of Photonics and Optoelectronics National Taiwan University No.1, Sec. 4, Roosevelt Rd. Taipei 10617 TaiwanResearch Center for Applied Sciences Academia Sinica No. 128, Sec. 2, Academia Rd. Taipei 11529 TaiwanGraduate Institute of Photonics and Optoelectronics National Taiwan University No.1, Sec. 4, Roosevelt Rd. Taipei 10617 TaiwanDepartment of Photonics National Yang Ming Chiao Tung University No. 1001, Daxue Rd., East Dist. Hsinchu 300 TaiwanResearch Center for Applied Sciences Academia Sinica No. 128, Sec. 2, Academia Rd. Taipei 11529 TaiwanAbstract Wafer‐scale and layered MoS2 films are grown by sulfurizing amorphous MoS2 films deposited on sapphire substrates by using a radio‐frequency sputtering system. To verify the layer numbers of the multi‐layer MoS2 films, atomic layer etchings are adopted. Wafer‐scale MoS2 film growth with good layer number uniformity up to 30 is observed. A vertical device with 20‐layer MoS2 embedded in between Al (bottom) and Au (top) electrodes is fabricated. With different work functions of the metal electrodes, photo‐excited electrons and holes in the MoS2 layer can be separated and form photovoltaic responses. With the insertion of 5 nm MoO3 carrier transport layer between the MoS2 layer and the top Au electrode, enhanced photovoltaic responses are observed for the device. By using graphene as the carrier transport layer and MoS2 as the light absorption layer, avalanche photocurrents are observed for planar MoS2/graphene photoconductive devices. With the assist of the higher electron density in multi‐layer MoS2, an easier compensation in the loss of photo‐excited electrons and therefore, charge neutrality in the MoS2 layer can be maintained. Significant reduction in the rise/fall times from >100 ms. to <10 ms. is also observed for the planar photodetector with 10‐layer MoS2 absorption layer.https://doi.org/10.1002/admi.202400641multilayer 2D material filmsmolybdenum disulfideatomic layer etchingphotovoltaicvertical 2D material devices |
| spellingShingle | Yu‐Han Huang Zhi‐Wei Chen Chao‐Hsin Wu Po‐Tsung Lee Shih‐Yen Lin Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors Advanced Materials Interfaces multilayer 2D material films molybdenum disulfide atomic layer etching photovoltaic vertical 2D material devices |
| title | Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors |
| title_full | Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors |
| title_fullStr | Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors |
| title_full_unstemmed | Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors |
| title_short | Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors |
| title_sort | layer number controllable molybdenum disulfide film growth and its applications in vertical and planar photodetectors |
| topic | multilayer 2D material films molybdenum disulfide atomic layer etching photovoltaic vertical 2D material devices |
| url | https://doi.org/10.1002/admi.202400641 |
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