High-pressure research on optoelectronic materials: Insights from in situ characterization methods

High-pressure research has emerged as a pivotal approach for advancing our understanding and development of optoelectronic materials, which are vital for a wide range of applications, including photovoltaics, light-emitting devices, and photodetectors. This review highlights various in situ characte...

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Main Authors: Songhao Guo, Yiqiang Zhan, Xujie Lü
Format: Article
Language:English
Published: AIP Publishing LLC 2025-05-01
Series:Matter and Radiation at Extremes
Online Access:http://dx.doi.org/10.1063/5.0258375
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author Songhao Guo
Yiqiang Zhan
Xujie Lü
author_facet Songhao Guo
Yiqiang Zhan
Xujie Lü
author_sort Songhao Guo
collection DOAJ
description High-pressure research has emerged as a pivotal approach for advancing our understanding and development of optoelectronic materials, which are vital for a wide range of applications, including photovoltaics, light-emitting devices, and photodetectors. This review highlights various in situ characterization methods employed in high-pressure research to investigate the optical, electronic, and structural properties of optoelectronic materials. We explore the advances that have been made in techniques such as X-ray diffraction, absorption spectroscopy, nonlinear optics, photoluminescence spectroscopy, Raman spectroscopy, and photoresponse measurement, emphasizing how these methods have enhanced the elucidation of structural transitions, bandgap modulation, performance optimization, and carrier dynamics engineering. These insights underscore the pivotal role of high-pressure techniques in optimizing and tailoring optoelectronic materials for future applications.
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series Matter and Radiation at Extremes
spelling doaj-art-fe35e4664f4e4e3d848e228022f0fd972025-08-20T03:37:17ZengAIP Publishing LLCMatter and Radiation at Extremes2468-080X2025-05-01103033802033802-1410.1063/5.0258375High-pressure research on optoelectronic materials: Insights from in situ characterization methodsSonghao GuoYiqiang Zhan0Xujie Lü1Center of Micro–Nano Systems, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, ChinaHigh-pressure research has emerged as a pivotal approach for advancing our understanding and development of optoelectronic materials, which are vital for a wide range of applications, including photovoltaics, light-emitting devices, and photodetectors. This review highlights various in situ characterization methods employed in high-pressure research to investigate the optical, electronic, and structural properties of optoelectronic materials. We explore the advances that have been made in techniques such as X-ray diffraction, absorption spectroscopy, nonlinear optics, photoluminescence spectroscopy, Raman spectroscopy, and photoresponse measurement, emphasizing how these methods have enhanced the elucidation of structural transitions, bandgap modulation, performance optimization, and carrier dynamics engineering. These insights underscore the pivotal role of high-pressure techniques in optimizing and tailoring optoelectronic materials for future applications.http://dx.doi.org/10.1063/5.0258375
spellingShingle Songhao Guo
Yiqiang Zhan
Xujie Lü
High-pressure research on optoelectronic materials: Insights from in situ characterization methods
Matter and Radiation at Extremes
title High-pressure research on optoelectronic materials: Insights from in situ characterization methods
title_full High-pressure research on optoelectronic materials: Insights from in situ characterization methods
title_fullStr High-pressure research on optoelectronic materials: Insights from in situ characterization methods
title_full_unstemmed High-pressure research on optoelectronic materials: Insights from in situ characterization methods
title_short High-pressure research on optoelectronic materials: Insights from in situ characterization methods
title_sort high pressure research on optoelectronic materials insights from in situ characterization methods
url http://dx.doi.org/10.1063/5.0258375
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AT yiqiangzhan highpressureresearchonoptoelectronicmaterialsinsightsfrominsitucharacterizationmethods
AT xujielu highpressureresearchonoptoelectronicmaterialsinsightsfrominsitucharacterizationmethods