Interface Optimization and Thermal Conductivity of Cu/Diamond Composites by Spark Plasma Sintering Process
Cu/Diamond (Cu/Dia) composites are regarded as next-generation thermal dissipation materials and hold tremendous potential for use in future high-power electronic devices. The interface structure between the Cu matrix and the diamond has a significant impact on the thermophysical properties of the c...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/1/73 |
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| Summary: | Cu/Diamond (Cu/Dia) composites are regarded as next-generation thermal dissipation materials and hold tremendous potential for use in future high-power electronic devices. The interface structure between the Cu matrix and the diamond has a significant impact on the thermophysical properties of the composite materials. In this study, Cu/Dia composite materials were fabricated using the Spark Plasma Sintering (SPS) process. The results indicate that the agglomeration of diamond particles decreases with increasing particle size and that a uniform distribution is achieved at 200 μm. With an increase in the sintering temperature, the interface bonding is first optimized and then weakened, with the optimal sintering temperature being 900 °C. The addition of Cr to the Cu matrix leads to the formation of Cr<sub>7</sub>C<sub>3</sub> after sintering, which enhances the relative density and bonding strength at the interface, transitioning it from a physical bond to a metallurgical bond. Optimizing the diamond particle size increased the thermal conductivity from 310 W/m K to 386 W/m K, while further optimizing the interface led to a significant increase to 516 W/m K, representing an overall improvement of approximately 66%. |
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| ISSN: | 2079-4991 |