Plasma-Optical Effect in GaAs PIN Photodiodes
This paper is devoted to the analysis of the Plasma-Optical Effect in GaAs PIN photodiodes operating at the infrared range. An approximated expression for the variation of the refractive index in the intrinsic zone of a AsGa PIN photodiode is obtained. This variation is induced by the charge of the...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1993-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1993/56352 |
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| Summary: | This paper is devoted to the analysis of the Plasma-Optical Effect in GaAs PIN photodiodes operating
at the infrared range. An approximated expression for the variation of the refractive index in the
intrinsic zone of a AsGa PIN photodiode is obtained. This variation is induced by the charge of the
device. The approach developed by us is in a good agreement with experimental works. Moreover, an
application concerning high-frequency ICs is outlined. |
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| ISSN: | 0882-7516 1563-5031 |