High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure
The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-t...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2014/784918 |
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| author | Zhiming Li Jinping Li Haiying Jiang Yanbin Han Yingjie Xia Yimei Huang Jianqin Yin Shigang Hu |
| author_facet | Zhiming Li Jinping Li Haiying Jiang Yanbin Han Yingjie Xia Yimei Huang Jianqin Yin Shigang Hu |
| author_sort | Zhiming Li |
| collection | DOAJ |
| description | The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-type resistivity of 3 Ω·cm for p-type Al0.3Ga0.7N was achieved. The RTA annealing impacted on electrical, doping profile and morphological properties of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure have been also discussed. The quality of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure degraded after annealing from HRXRD. At appropriate annealing temperature and time, surface morphology of Mg-doped Al0.3Ga0.7N can be improved. A step-like distribution of [Mg] and [H] in p-type Al0.3Ga0.7N was observed, and thermal diffusion direction of [Mg] and [H] was also discussed. |
| format | Article |
| id | doaj-art-fd87eec4c94f4173abfeaa71c9980497 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-fd87eec4c94f4173abfeaa71c99804972025-02-03T01:28:49ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242014-01-01201410.1155/2014/784918784918High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice StructureZhiming Li0Jinping Li1Haiying Jiang2Yanbin Han3Yingjie Xia4Yimei Huang5Jianqin Yin6Shigang Hu7Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan 250022, ChinaShandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan 250022, ChinaShandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan 250022, ChinaShandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan 250022, ChinaShandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan 250022, ChinaShandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan 250022, ChinaShandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan 250022, ChinaSchool of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, ChinaThe highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-type resistivity of 3 Ω·cm for p-type Al0.3Ga0.7N was achieved. The RTA annealing impacted on electrical, doping profile and morphological properties of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure have been also discussed. The quality of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure degraded after annealing from HRXRD. At appropriate annealing temperature and time, surface morphology of Mg-doped Al0.3Ga0.7N can be improved. A step-like distribution of [Mg] and [H] in p-type Al0.3Ga0.7N was observed, and thermal diffusion direction of [Mg] and [H] was also discussed.http://dx.doi.org/10.1155/2014/784918 |
| spellingShingle | Zhiming Li Jinping Li Haiying Jiang Yanbin Han Yingjie Xia Yimei Huang Jianqin Yin Shigang Hu High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure Advances in Condensed Matter Physics |
| title | High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure |
| title_full | High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure |
| title_fullStr | High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure |
| title_full_unstemmed | High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure |
| title_short | High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure |
| title_sort | high conductivity of mg doped al0 3ga0 7n with al0 4ga0 6n aln superlattice structure |
| url | http://dx.doi.org/10.1155/2014/784918 |
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