On the temperature-dependence characterization and modeling of GaN HEMTs
Thermal effects present a major challenge for all semiconductor devices, especially high-power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures significantly impact the device's small- and large-signal characteristics, leading t...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-09-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671125001676 |
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