On the temperature-dependence characterization and modeling of GaN HEMTs
Thermal effects present a major challenge for all semiconductor devices, especially high-power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures significantly impact the device's small- and large-signal characteristics, leading t...
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Elsevier
2025-09-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671125001676 |
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| author | Anwar Jarndal Lutfi Albasha Hasan Mir |
| author_facet | Anwar Jarndal Lutfi Albasha Hasan Mir |
| author_sort | Anwar Jarndal |
| collection | DOAJ |
| description | Thermal effects present a major challenge for all semiconductor devices, especially high-power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures significantly impact the device's small- and large-signal characteristics, leading to performance degradation. In this paper, a 10 × 200-µm GaN-on-Si substrate depletion-mode HEMT was characterized using DC (Direct Current) and pulsed IV measurement setups at different ambient temperatures and quiescent voltages. These measurements were used to investigate the influence of temperature on the drain current and to develop an electrothermal model for the device. The results show that the drain current is highly sensitive to temperature, exhibiting a significant reduction at higher temperatures, which in turn affects large-signal output power, gain, and power-added efficiency. Additionally, temperature has a stronger impact on parasitic resistances, indirectly affecting the DC and RF (Radio Frequency) characteristics of the device. This investigation highlights the critical role of thermal effects and underscores the need for effective thermal management strategies. |
| format | Article |
| id | doaj-art-fd7ef97715f0471699a9f64e1fbb2676 |
| institution | Kabale University |
| issn | 2772-6711 |
| language | English |
| publishDate | 2025-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| spelling | doaj-art-fd7ef97715f0471699a9f64e1fbb26762025-08-20T03:49:54ZengElseviere-Prime: Advances in Electrical Engineering, Electronics and Energy2772-67112025-09-011310106010.1016/j.prime.2025.101060On the temperature-dependence characterization and modeling of GaN HEMTsAnwar Jarndal0Lutfi Albasha1Hasan Mir2Electrical Enginering Department, University of Sharjah, Sharjah, United Arab Emirates; Corresponding author.Electrical Enginering Department, American University of Sharjah, Sharjah, United Arab EmiratesElectrical Enginering Department, American University of Sharjah, Sharjah, United Arab EmiratesThermal effects present a major challenge for all semiconductor devices, especially high-power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures significantly impact the device's small- and large-signal characteristics, leading to performance degradation. In this paper, a 10 × 200-µm GaN-on-Si substrate depletion-mode HEMT was characterized using DC (Direct Current) and pulsed IV measurement setups at different ambient temperatures and quiescent voltages. These measurements were used to investigate the influence of temperature on the drain current and to develop an electrothermal model for the device. The results show that the drain current is highly sensitive to temperature, exhibiting a significant reduction at higher temperatures, which in turn affects large-signal output power, gain, and power-added efficiency. Additionally, temperature has a stronger impact on parasitic resistances, indirectly affecting the DC and RF (Radio Frequency) characteristics of the device. This investigation highlights the critical role of thermal effects and underscores the need for effective thermal management strategies.http://www.sciencedirect.com/science/article/pii/S2772671125001676GaN HEMTThermal characterizationPuled IVsElectrothermal modeling |
| spellingShingle | Anwar Jarndal Lutfi Albasha Hasan Mir On the temperature-dependence characterization and modeling of GaN HEMTs e-Prime: Advances in Electrical Engineering, Electronics and Energy GaN HEMT Thermal characterization Puled IVs Electrothermal modeling |
| title | On the temperature-dependence characterization and modeling of GaN HEMTs |
| title_full | On the temperature-dependence characterization and modeling of GaN HEMTs |
| title_fullStr | On the temperature-dependence characterization and modeling of GaN HEMTs |
| title_full_unstemmed | On the temperature-dependence characterization and modeling of GaN HEMTs |
| title_short | On the temperature-dependence characterization and modeling of GaN HEMTs |
| title_sort | on the temperature dependence characterization and modeling of gan hemts |
| topic | GaN HEMT Thermal characterization Puled IVs Electrothermal modeling |
| url | http://www.sciencedirect.com/science/article/pii/S2772671125001676 |
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