Hydrogen passivation effects on polycrystalline germanium thin films
Abstract The performance of polycrystalline Ge thin films, anticipated for application in advanced electronic and optical devices, has markedly improved in recent years. However, the high density of acceptor defects in Ge complicates Fermi level control, impeding device applications. This study expl...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-06-01
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| Series: | NPG Asia Materials |
| Online Access: | https://doi.org/10.1038/s41427-025-00611-w |
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