Material Dispersion in Intrinsic GaAs for the Far-Infrared Range

An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.

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Bibliographic Details
Main Authors: M. A. Grado-Caffaro, M. Grado-Caffaro
Format: Article
Language:English
Published: Wiley 1998-01-01
Series:Active and Passive Electronic Components
Subjects:
Online Access:http://dx.doi.org/10.1155/1998/84657
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