Gate Dielectric Engineering Using Stacked Gate Dielectric in U-Shaped Gate Tunnel FET

Gate Dielectric Engineering Using Stacked Gate Dielectric in U-Shaped Gate Tunnel FET

In this paper, an innovative approach for the performance enhancement of tunnel field-effect transistors (TFETs) is presented with the introduction of the stacked gate oxide U-shaped tunnel FET (SUTFET). This novel design incorporates a unique combination of titanium dioxide (TiO2) and silicon dioxi...

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Bibliographic Details
Main Authors: Sina Mehrad, Hamid Reza Yaghobi, Kaveh Eyvazi, Mohammad Azim Karami
Format: Article
Language:English
Published: Wiley 2025-01-01
Series:IET Circuits, Devices and Systems
Online Access:http://dx.doi.org/10.1049/cds2/5014133
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