Gate Dielectric Engineering Using Stacked Gate Dielectric in U-Shaped Gate Tunnel FET
In this paper, an innovative approach for the performance enhancement of tunnel field-effect transistors (TFETs) is presented with the introduction of the stacked gate oxide U-shaped tunnel FET (SUTFET). This novel design incorporates a unique combination of titanium dioxide (TiO2) and silicon dioxi...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-01-01
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| Series: | IET Circuits, Devices and Systems |
| Online Access: | http://dx.doi.org/10.1049/cds2/5014133 |
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