Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer
We investigated p-i-n type amorphous silicon (a-Si) solar cell where the diborane flow rate of the p-type layer was varied and the solar cell was measured static/dynamic characteristics. The p/i interface of the thin film amorphous silicon solar cells was studied in terms of the coordination number...
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
|
| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/767248 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | We investigated p-i-n type amorphous silicon (a-Si) solar cell where the diborane flow rate of the p-type layer was varied and the solar cell was measured static/dynamic characteristics. The p/i interface of the thin film amorphous silicon solar cells was studied in terms of the coordination number of boron atoms in the p layer. p-type layer and p/i interface properties were obtained from the X-ray photoelectron spectroscopy (XPS) and impedance spectroscopy. One of the solar cells shows open circuit voltage (𝑉oc)=880 mV, short circuit current density (𝐽sc)=14.21 mA/cm2, fill factor (FF)=72.03%,
and efficiency (𝜂)=8.8% while the p-type layer was doped with 0.1%. The impedance spectroscopic measurement showed that the diode ideality factor and built-in potential changed with change in diborane flow rate. |
|---|---|
| ISSN: | 1110-662X 1687-529X |