The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer
We reported the effect of bandgap grading of absorbers on the performance of a-Si1−xGex:H cells employing μc-SiOx:H n-layer. The influence of bandgap grading widths extended from the p-layer (the p/i grading) and the n-layer (the i/n grading) to the absorber on the cell performance which were system...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/364638 |
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| author | Hung-Jung Hsu Cheng-Hang Hsu Chuang-Chuang Tsai |
| author_facet | Hung-Jung Hsu Cheng-Hang Hsu Chuang-Chuang Tsai |
| author_sort | Hung-Jung Hsu |
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| description | We reported the effect of bandgap grading of absorbers on the performance of a-Si1−xGex:H cells employing μc-SiOx:H n-layer. The influence of bandgap grading widths extended from the p-layer (the p/i grading) and the n-layer (the i/n grading) to the absorber on the cell performance which were systematically studied. The p/i grading reduced the interface defects and thus improved the VOC. The reduced JSC and FF were presumably due to the degraded hole transport by the potential gradient of p/i grading. Increasing the i/n grading width improved the carrier collection significantly. The EQE, the JSC, and the FF were improved substantially. Bias-dependent EQE revealed that the carrier collection is efficient in the cell employing optimal i/n grading. On the other hand, increasing the i/n grading width was accompanied by the decrease in long-wavelength response which potentially constrained the i/n grading width. Compared to the cell without grading, the a-Si1−xGex:H cells with optimal p/i and i/n grading width improved the efficiency from 5.5 to 7.5%. |
| format | Article |
| id | doaj-art-fbc68f5fa40d4765ab656675bb6fc06e |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-fbc68f5fa40d4765ab656675bb6fc06e2025-02-03T05:59:28ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/364638364638The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type LayerHung-Jung Hsu0Cheng-Hang Hsu1Chuang-Chuang Tsai2Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanWe reported the effect of bandgap grading of absorbers on the performance of a-Si1−xGex:H cells employing μc-SiOx:H n-layer. The influence of bandgap grading widths extended from the p-layer (the p/i grading) and the n-layer (the i/n grading) to the absorber on the cell performance which were systematically studied. The p/i grading reduced the interface defects and thus improved the VOC. The reduced JSC and FF were presumably due to the degraded hole transport by the potential gradient of p/i grading. Increasing the i/n grading width improved the carrier collection significantly. The EQE, the JSC, and the FF were improved substantially. Bias-dependent EQE revealed that the carrier collection is efficient in the cell employing optimal i/n grading. On the other hand, increasing the i/n grading width was accompanied by the decrease in long-wavelength response which potentially constrained the i/n grading width. Compared to the cell without grading, the a-Si1−xGex:H cells with optimal p/i and i/n grading width improved the efficiency from 5.5 to 7.5%.http://dx.doi.org/10.1155/2013/364638 |
| spellingShingle | Hung-Jung Hsu Cheng-Hang Hsu Chuang-Chuang Tsai The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer International Journal of Photoenergy |
| title | The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer |
| title_full | The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer |
| title_fullStr | The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer |
| title_full_unstemmed | The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer |
| title_short | The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer |
| title_sort | effect of bandgap graded absorber on the performance of a si1 xgex h single junction cells with μc siox h n type layer |
| url | http://dx.doi.org/10.1155/2013/364638 |
| work_keys_str_mv | AT hungjunghsu theeffectofbandgapgradedabsorberontheperformanceofasi1xgexhsinglejunctioncellswithmcsioxhntypelayer AT chenghanghsu theeffectofbandgapgradedabsorberontheperformanceofasi1xgexhsinglejunctioncellswithmcsioxhntypelayer AT chuangchuangtsai theeffectofbandgapgradedabsorberontheperformanceofasi1xgexhsinglejunctioncellswithmcsioxhntypelayer AT hungjunghsu effectofbandgapgradedabsorberontheperformanceofasi1xgexhsinglejunctioncellswithmcsioxhntypelayer AT chenghanghsu effectofbandgapgradedabsorberontheperformanceofasi1xgexhsinglejunctioncellswithmcsioxhntypelayer AT chuangchuangtsai effectofbandgapgradedabsorberontheperformanceofasi1xgexhsinglejunctioncellswithmcsioxhntypelayer |