Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology

This paper presents an active phase shifter for phased array system applications, implemented using 0.18 μm SiGe BiCMOS technology. The phase shifter circuit consists of a wideband quadrature signal generator, a vector modulator, an input balun, and an output balun. To enhance the bandwidth, a polyp...

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Main Authors: Hao Jiang, Zenglong Zhao, Nengxu Zhu, Fanyi Meng
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Journal of Low Power Electronics and Applications
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Online Access:https://www.mdpi.com/2079-9268/15/2/30
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author Hao Jiang
Zenglong Zhao
Nengxu Zhu
Fanyi Meng
author_facet Hao Jiang
Zenglong Zhao
Nengxu Zhu
Fanyi Meng
author_sort Hao Jiang
collection DOAJ
description This paper presents an active phase shifter for phased array system applications, implemented using 0.18 μm SiGe BiCMOS technology. The phase shifter circuit consists of a wideband quadrature signal generator, a vector modulator, an input balun, and an output balun. To enhance the bandwidth, a polyphase filter is employed as the quadrature signal generator, and a two-stage RC-CR filter with a highly symmetrical miniaturized layout is cascaded to create multiple resonant points, thus extending the phase shifter’s bandwidth to cover the required range. The gain of the variable-gain amplifier within the vector modulator is adjustable by varying the tail current, thereby enlarging the range of selectable points, improving phase-shifting accuracy, and reducing gain fluctuations. The measurement results show that the proposed active phase shifter achieves an RMS phase error of less than 2° and a gain variation ranging from −1.2 dB to 0.1 dB across a 20 GHz to 30 GHz bandwidth at room temperature. The total chip area is 0.4 mm<sup>2</sup>, with a core area of 0.165 mm<sup>2</sup>, and consumes 19.5 mW of power from a 2.5 V supply.
format Article
id doaj-art-fb4a462affe04eb2b37ac7e30a01de90
institution OA Journals
issn 2079-9268
language English
publishDate 2025-05-01
publisher MDPI AG
record_format Article
series Journal of Low Power Electronics and Applications
spelling doaj-art-fb4a462affe04eb2b37ac7e30a01de902025-08-20T02:21:03ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682025-05-011523010.3390/jlpea15020030Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS TechnologyHao Jiang0Zenglong Zhao1Nengxu Zhu2Fanyi Meng3The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaThis paper presents an active phase shifter for phased array system applications, implemented using 0.18 μm SiGe BiCMOS technology. The phase shifter circuit consists of a wideband quadrature signal generator, a vector modulator, an input balun, and an output balun. To enhance the bandwidth, a polyphase filter is employed as the quadrature signal generator, and a two-stage RC-CR filter with a highly symmetrical miniaturized layout is cascaded to create multiple resonant points, thus extending the phase shifter’s bandwidth to cover the required range. The gain of the variable-gain amplifier within the vector modulator is adjustable by varying the tail current, thereby enlarging the range of selectable points, improving phase-shifting accuracy, and reducing gain fluctuations. The measurement results show that the proposed active phase shifter achieves an RMS phase error of less than 2° and a gain variation ranging from −1.2 dB to 0.1 dB across a 20 GHz to 30 GHz bandwidth at room temperature. The total chip area is 0.4 mm<sup>2</sup>, with a core area of 0.165 mm<sup>2</sup>, and consumes 19.5 mW of power from a 2.5 V supply.https://www.mdpi.com/2079-9268/15/2/30SiGe BiCMOSphase shifterquadrature signal generatorvector modulator
spellingShingle Hao Jiang
Zenglong Zhao
Nengxu Zhu
Fanyi Meng
Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
Journal of Low Power Electronics and Applications
SiGe BiCMOS
phase shifter
quadrature signal generator
vector modulator
title Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
title_full Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
title_fullStr Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
title_full_unstemmed Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
title_short Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
title_sort design and analysis of an ultra wideband high precision active phase shifter in 0 18 μm sige bicmos technology
topic SiGe BiCMOS
phase shifter
quadrature signal generator
vector modulator
url https://www.mdpi.com/2079-9268/15/2/30
work_keys_str_mv AT haojiang designandanalysisofanultrawidebandhighprecisionactivephaseshifterin018mmsigebicmostechnology
AT zenglongzhao designandanalysisofanultrawidebandhighprecisionactivephaseshifterin018mmsigebicmostechnology
AT nengxuzhu designandanalysisofanultrawidebandhighprecisionactivephaseshifterin018mmsigebicmostechnology
AT fanyimeng designandanalysisofanultrawidebandhighprecisionactivephaseshifterin018mmsigebicmostechnology