Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2
The prominent properties of van der Waals (vdW) magnets make them a promising platform for prospective spintronic applications. Fe3GaTe2 is a newly discovered vdW material that exhibits room-temperature ferromagnetism and topological spin textures. In this paper, we report the observation of an unco...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0245797 |
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| author | Hanin Algaidi Chenhui Zhang Chen Liu Yinchang Ma Dongxing Zheng Peng Li Xixiang Zhang |
| author_facet | Hanin Algaidi Chenhui Zhang Chen Liu Yinchang Ma Dongxing Zheng Peng Li Xixiang Zhang |
| author_sort | Hanin Algaidi |
| collection | DOAJ |
| description | The prominent properties of van der Waals (vdW) magnets make them a promising platform for prospective spintronic applications. Fe3GaTe2 is a newly discovered vdW material that exhibits room-temperature ferromagnetism and topological spin textures. In this paper, we report the observation of an unconventional topological Hall effect (THE) up to room temperature in Fe3GaTe2. When the current flows along the ab plane, a conventional anomalous Hall effect is observed under an out-of-plane magnetic field, which can be depicted by the intrinsic Karplus–Luttinger mechanism. Intriguingly, by rotating the magnetic field to align with the current direction, unexpected Hall resistivity cusps emerge. This Hall resistivity anomaly can be explained by the in-plane THE, which may originate from the noncoplanar spin structures in Fe3GaTe2. These spin structures have a nonzero scalar spin chirality and act as a fictitious magnetic field that produces a real-space Berry curvature. By extracting the topological Hall resistivity at different temperatures, a THE phase diagram is successfully constructed, showing a maximum value of 1.48 μΩ cm at 250 K. The room-temperature THE reveals the great potential of Fe3GaTe2 for spintronic applications. |
| format | Article |
| id | doaj-art-faa3774e77964a86ac43c53b7cc24000 |
| institution | Kabale University |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-faa3774e77964a86ac43c53b7cc240002025-02-03T16:42:31ZengAIP Publishing LLCAPL Materials2166-532X2025-01-01131011108011108-710.1063/5.0245797Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2Hanin Algaidi0Chenhui Zhang1Chen Liu2Yinchang Ma3Dongxing Zheng4Peng Li5Xixiang Zhang6Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhysical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhysical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhysical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhysical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaState Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, ChinaPhysical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaThe prominent properties of van der Waals (vdW) magnets make them a promising platform for prospective spintronic applications. Fe3GaTe2 is a newly discovered vdW material that exhibits room-temperature ferromagnetism and topological spin textures. In this paper, we report the observation of an unconventional topological Hall effect (THE) up to room temperature in Fe3GaTe2. When the current flows along the ab plane, a conventional anomalous Hall effect is observed under an out-of-plane magnetic field, which can be depicted by the intrinsic Karplus–Luttinger mechanism. Intriguingly, by rotating the magnetic field to align with the current direction, unexpected Hall resistivity cusps emerge. This Hall resistivity anomaly can be explained by the in-plane THE, which may originate from the noncoplanar spin structures in Fe3GaTe2. These spin structures have a nonzero scalar spin chirality and act as a fictitious magnetic field that produces a real-space Berry curvature. By extracting the topological Hall resistivity at different temperatures, a THE phase diagram is successfully constructed, showing a maximum value of 1.48 μΩ cm at 250 K. The room-temperature THE reveals the great potential of Fe3GaTe2 for spintronic applications.http://dx.doi.org/10.1063/5.0245797 |
| spellingShingle | Hanin Algaidi Chenhui Zhang Chen Liu Yinchang Ma Dongxing Zheng Peng Li Xixiang Zhang Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2 APL Materials |
| title | Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2 |
| title_full | Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2 |
| title_fullStr | Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2 |
| title_full_unstemmed | Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2 |
| title_short | Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2 |
| title_sort | room temperature unconventional topological hall effect in a van der waals ferromagnet fe3gate2 |
| url | http://dx.doi.org/10.1063/5.0245797 |
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