Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption
Abstract Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III‐V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra‐high op...
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| Format: | Article |
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Wiley
2025-02-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202412340 |
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| author | Chia‐Hung Wu Chi‐Wen Chen Hung‐Jung Shen Hsiang‐Yu Chuang Hark Hoe Tan Chennupati Jagadish Tien‐Chang Lu Satoshi Ishii Kuo‐Ping Chen |
| author_facet | Chia‐Hung Wu Chi‐Wen Chen Hung‐Jung Shen Hsiang‐Yu Chuang Hark Hoe Tan Chennupati Jagadish Tien‐Chang Lu Satoshi Ishii Kuo‐Ping Chen |
| author_sort | Chia‐Hung Wu |
| collection | DOAJ |
| description | Abstract Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III‐V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra‐high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22‐fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra‐high capacitance due to the nanometer‐wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100‐fold compared to the conventional bottom gate configurations. This IL‐embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system. |
| format | Article |
| id | doaj-art-f94e62053e7d411cb3e2ad8b62337288 |
| institution | DOAJ |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-f94e62053e7d411cb3e2ad8b623372882025-08-20T03:09:54ZengWileyAdvanced Science2198-38442025-02-01128n/an/a10.1002/advs.202412340Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy ConsumptionChia‐Hung Wu0Chi‐Wen Chen1Hung‐Jung Shen2Hsiang‐Yu Chuang3Hark Hoe Tan4Chennupati Jagadish5Tien‐Chang Lu6Satoshi Ishii7Kuo‐Ping Chen8College of Photonics National Yang Ming Chiao Tung University 301 Gaofa 3rd Road Tainan 71150 TaiwanInstitute of Photonic System College of Photonics National Yang Ming Chiao Tung University 301 Gaofa 3rd Road Tainan 71150 TaiwanInstitute of Photonics Technologies National Tsing Hua University Hsinchu 300 TaiwanInstitute of Photonics Technologies National Tsing Hua University Hsinchu 300 TaiwanARC Centre of Excellence for Transformative Meta‐Optical Systems Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra ACT 2600 AustraliaARC Centre of Excellence for Transformative Meta‐Optical Systems Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra ACT 2600 AustraliaDepartment of Photonics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 30010 TaiwanInternational Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba Ibaraki 305‐0044 JapanCollege of Photonics National Yang Ming Chiao Tung University 301 Gaofa 3rd Road Tainan 71150 TaiwanAbstract Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III‐V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra‐high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22‐fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra‐high capacitance due to the nanometer‐wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100‐fold compared to the conventional bottom gate configurations. This IL‐embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.https://doi.org/10.1002/advs.202412340carrier modulationflexible substrateInP nanolasersionic liquid |
| spellingShingle | Chia‐Hung Wu Chi‐Wen Chen Hung‐Jung Shen Hsiang‐Yu Chuang Hark Hoe Tan Chennupati Jagadish Tien‐Chang Lu Satoshi Ishii Kuo‐Ping Chen Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption Advanced Science carrier modulation flexible substrate InP nanolasers ionic liquid |
| title | Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption |
| title_full | Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption |
| title_fullStr | Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption |
| title_full_unstemmed | Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption |
| title_short | Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption |
| title_sort | reversible carrier modulation in inp nanolasers by ionic liquid gating with low energy consumption |
| topic | carrier modulation flexible substrate InP nanolasers ionic liquid |
| url | https://doi.org/10.1002/advs.202412340 |
| work_keys_str_mv | AT chiahungwu reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption AT chiwenchen reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption AT hungjungshen reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption AT hsiangyuchuang reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption AT harkhoetan reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption AT chennupatijagadish reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption AT tienchanglu reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption AT satoshiishii reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption AT kuopingchen reversiblecarriermodulationininpnanolasersbyionicliquidgatingwithlowenergyconsumption |