Characterization Methodology for Voltage-Dependent Mobility of Charge Carriers in Graphene FETs Using Single-Device Microwave Measurements

Characterization Methodology for Voltage-Dependent Mobility of Charge Carriers in Graphene FETs Using Single-Device Microwave Measurements

This work proposes a methodology entirely based on processing <italic>S</italic>-parameters to determine the gate-to-source voltage-dependent mobility of charge carriers in the graphene field-effect transistor channel, without requiring any information about the material properties. Furt...

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Bibliographic Details
Main Authors: Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Aida Mansouri, Pankaj Kumar, Omid Habibpour, Herbert Zirath, Luca Anzi, Amaia Zurutuza, Roman Sordan, David Jimenez, Francisco Pasadas, Reydezel Torres-Torres
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of Microwaves
Subjects:
Graphene field-effect transistor
channel mobility
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">S</italic>-parameters
single device
small-signal
oxide capacitance
Online Access:https://ieeexplore.ieee.org/document/11060876/
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