Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth
In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are for...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/16/1/105 |
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| author | Jiyao Du Taofei Pu Xiaobo Li Liuan Li Jinping Ao Hongwei Gao |
| author_facet | Jiyao Du Taofei Pu Xiaobo Li Liuan Li Jinping Ao Hongwei Gao |
| author_sort | Jiyao Du |
| collection | DOAJ |
| description | In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga’s figure of merit value. Furthermore, a p-GaN shield layer is also adopted as a junction termination extension to modulate the electric field around the trench bottom. By optimizing the device parameters, a normally-off GaN MOSFET with good performance is designed. |
| format | Article |
| id | doaj-art-f5585b78ff7a461da4c6f649e5619615 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-f5585b78ff7a461da4c6f649e56196152025-01-24T13:42:12ZengMDPI AGMicromachines2072-666X2025-01-0116110510.3390/mi16010105Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area GrowthJiyao Du0Taofei Pu1Xiaobo Li2Liuan Li3Jinping Ao4Hongwei Gao5School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, ChinaLancomm Semiconductor (Hangzhou) Co., Ltd., Hangzhou 310018, ChinaLancomm Semiconductor (Hangzhou) Co., Ltd., Hangzhou 310018, ChinaState Key Laboratory of Superhard Material, Jilin University, Changchun 130012, ChinaEngineering Research Center of Internet of Things Technology Applications, Jiangnan University, Wuxi 214122, ChinaSchool of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, ChinaIn the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga’s figure of merit value. Furthermore, a p-GaN shield layer is also adopted as a junction termination extension to modulate the electric field around the trench bottom. By optimizing the device parameters, a normally-off GaN MOSFET with good performance is designed.https://www.mdpi.com/2072-666X/16/1/105GaN MOSFETvertical devicesidewall channelselective area growthsimulation |
| spellingShingle | Jiyao Du Taofei Pu Xiaobo Li Liuan Li Jinping Ao Hongwei Gao Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth Micromachines GaN MOSFET vertical device sidewall channel selective area growth simulation |
| title | Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth |
| title_full | Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth |
| title_fullStr | Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth |
| title_full_unstemmed | Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth |
| title_short | Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth |
| title_sort | simulation of normally off vertical gan mosfet with a novel enhanced sidewall channel by selective area growth |
| topic | GaN MOSFET vertical device sidewall channel selective area growth simulation |
| url | https://www.mdpi.com/2072-666X/16/1/105 |
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