Optical and electrical transport properties of α-Ga2O3 thin films with electrical compensation of Sn impurities
Polycrystalline α-Ga2O3 thin films containing secondary phase SnO were grown on BaF2 substrates by magnetron sputtering. The impurity tin concentration, electron concentration, and room temperature mobility of the α-Ga2O3 films are 4.5 × 1020 cm−3, 1.5 × 1015 cm−3, and 26.9 cm2 V−1 s−1, respectively...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0244593 |
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