Computer Simulation of the Thin Film’s Growth Process during Thermal Vacuum Evaporation
The various thin film growth mechanisms during thermal vacuum evaporation at atomic level are considered under different condition. Which factors and how influence on the quality of obtained thin films was demonstrated. The thin film’s growth process in intermediately (Stranski-Krastanov) mode was s...
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| Format: | Article |
| Language: | Russian |
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Saint Petersburg Electrotechnical University "LETI"
2016-12-01
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| Series: | Известия высших учебных заведений России: Радиоэлектроника |
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| Online Access: | https://re.eltech.ru/jour/article/view/142 |
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| _version_ | 1850031555483795456 |
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| author | T. Su. Chu |
| author_facet | T. Su. Chu |
| author_sort | T. Su. Chu |
| collection | DOAJ |
| description | The various thin film growth mechanisms during thermal vacuum evaporation at atomic level are considered under different condition. Which factors and how influence on the quality of obtained thin films was demonstrated. The thin film’s growth process in intermediately (Stranski-Krastanov) mode was simulated based on Monte Carlo method for determination of active particles’ number, and quasi-Newtonian lattice method for determination of optimal direction of particles’ motion. On this model in any given conditions the fractal growth process was analyzed. The phenomenon (opportunity) of the control and management of the growth process of thin films was considered. |
| format | Article |
| id | doaj-art-f36969b5e8ea4f4bbc4e43df74cd6b7e |
| institution | DOAJ |
| issn | 1993-8985 2658-4794 |
| language | Russian |
| publishDate | 2016-12-01 |
| publisher | Saint Petersburg Electrotechnical University "LETI" |
| record_format | Article |
| series | Известия высших учебных заведений России: Радиоэлектроника |
| spelling | doaj-art-f36969b5e8ea4f4bbc4e43df74cd6b7e2025-08-20T02:58:55ZrusSaint Petersburg Electrotechnical University "LETI"Известия высших учебных заведений России: Радиоэлектроника1993-89852658-47942016-12-01062231142Computer Simulation of the Thin Film’s Growth Process during Thermal Vacuum EvaporationT. Su. Chu0Saint-Petersburg Electrotechnical UniversityThe various thin film growth mechanisms during thermal vacuum evaporation at atomic level are considered under different condition. Which factors and how influence on the quality of obtained thin films was demonstrated. The thin film’s growth process in intermediately (Stranski-Krastanov) mode was simulated based on Monte Carlo method for determination of active particles’ number, and quasi-Newtonian lattice method for determination of optimal direction of particles’ motion. On this model in any given conditions the fractal growth process was analyzed. The phenomenon (opportunity) of the control and management of the growth process of thin films was considered.https://re.eltech.ru/jour/article/view/142computer simulationthin film’s growththermal vacuum evaporationmonte carlo methodlennard-jones potentialfractal structure |
| spellingShingle | T. Su. Chu Computer Simulation of the Thin Film’s Growth Process during Thermal Vacuum Evaporation Известия высших учебных заведений России: Радиоэлектроника computer simulation thin film’s growth thermal vacuum evaporation monte carlo method lennard-jones potential fractal structure |
| title | Computer Simulation of the Thin Film’s Growth Process during Thermal Vacuum Evaporation |
| title_full | Computer Simulation of the Thin Film’s Growth Process during Thermal Vacuum Evaporation |
| title_fullStr | Computer Simulation of the Thin Film’s Growth Process during Thermal Vacuum Evaporation |
| title_full_unstemmed | Computer Simulation of the Thin Film’s Growth Process during Thermal Vacuum Evaporation |
| title_short | Computer Simulation of the Thin Film’s Growth Process during Thermal Vacuum Evaporation |
| title_sort | computer simulation of the thin film s growth process during thermal vacuum evaporation |
| topic | computer simulation thin film’s growth thermal vacuum evaporation monte carlo method lennard-jones potential fractal structure |
| url | https://re.eltech.ru/jour/article/view/142 |
| work_keys_str_mv | AT tsuchu computersimulationofthethinfilmsgrowthprocessduringthermalvacuumevaporation |