Impact of gamma-ray irradiation on commercial silicon carbide MOSFET with boost converter application
This paper study impact of gamma-ray irradiation on the characteristics of silicon carbide power metal oxide semiconductor field effect transistor (SiC MOSFET) from CREE, Inc., and its corresponding effects on the operation of 5/12 V DC-DC boost converter. The proposed 10 A (C2M0280120D) SiC MOSFET...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000021 |
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