Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping
In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model currents that were an order higher than for str...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adadc2 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1825206991236104192 |
|---|---|
| author | Tariq Jamil Abdullah Al Mamun Mazumder Mafruda Rahman Muhammad Ali Jingyu Lin Hongxing Jiang Grigory Simin Asif Khan |
| author_facet | Tariq Jamil Abdullah Al Mamun Mazumder Mafruda Rahman Muhammad Ali Jingyu Lin Hongxing Jiang Grigory Simin Asif Khan |
| author_sort | Tariq Jamil |
| collection | DOAJ |
| description | In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model currents that were an order higher than for structures on layers that were grown/doped at identical temperatures using the conventional MOCVD process. Our work demonstrated that like the other reported approaches such as UV exposure during growth, the pulsed MOCVD process is also very effective in reducing point defects by the defect quasi-Fermi level-chemical potential control. |
| format | Article |
| id | doaj-art-f20f32a0c1e74164bfc6f1da54ed5fcb |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-f20f32a0c1e74164bfc6f1da54ed5fcb2025-02-07T02:52:53ZengIOP PublishingApplied Physics Express1882-07862025-01-0118202550110.35848/1882-0786/adadc2Si-doped AlN using pulsed metalorganic chemical vapor deposition and dopingTariq Jamil0https://orcid.org/0000-0002-7321-4654Abdullah Al Mamun Mazumder1Mafruda Rahman2Muhammad Ali3Jingyu Lin4https://orcid.org/0000-0003-1705-2635Hongxing Jiang5Grigory Simin6Asif Khan7Department of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical & Computer Engineering, Texas Tech University , TX 79409, United States of AmericaDepartment of Electrical & Computer Engineering, Texas Tech University , TX 79409, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaIn this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model currents that were an order higher than for structures on layers that were grown/doped at identical temperatures using the conventional MOCVD process. Our work demonstrated that like the other reported approaches such as UV exposure during growth, the pulsed MOCVD process is also very effective in reducing point defects by the defect quasi-Fermi level-chemical potential control.https://doi.org/10.35848/1882-0786/adadc2pulsed MOCVDAlN (Bulk)n-type AlN doping |
| spellingShingle | Tariq Jamil Abdullah Al Mamun Mazumder Mafruda Rahman Muhammad Ali Jingyu Lin Hongxing Jiang Grigory Simin Asif Khan Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping Applied Physics Express pulsed MOCVD AlN (Bulk) n-type AlN doping |
| title | Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping |
| title_full | Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping |
| title_fullStr | Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping |
| title_full_unstemmed | Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping |
| title_short | Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping |
| title_sort | si doped aln using pulsed metalorganic chemical vapor deposition and doping |
| topic | pulsed MOCVD AlN (Bulk) n-type AlN doping |
| url | https://doi.org/10.35848/1882-0786/adadc2 |
| work_keys_str_mv | AT tariqjamil sidopedalnusingpulsedmetalorganicchemicalvapordepositionanddoping AT abdullahalmamunmazumder sidopedalnusingpulsedmetalorganicchemicalvapordepositionanddoping AT mafrudarahman sidopedalnusingpulsedmetalorganicchemicalvapordepositionanddoping AT muhammadali sidopedalnusingpulsedmetalorganicchemicalvapordepositionanddoping AT jingyulin sidopedalnusingpulsedmetalorganicchemicalvapordepositionanddoping AT hongxingjiang sidopedalnusingpulsedmetalorganicchemicalvapordepositionanddoping AT grigorysimin sidopedalnusingpulsedmetalorganicchemicalvapordepositionanddoping AT asifkhan sidopedalnusingpulsedmetalorganicchemicalvapordepositionanddoping |