Role of sample thickness and self-absorption effects in simultaneous XEOL-XAS measurements on single crystalline ZnO and GaN
The x-ray excited optical luminescence (XEOL) for defect and near band edge (NBE) transitions combined with simultaneous x-ray absorption measurements are experimentally and theoretically studied on single crystalline ZnO and GaN across the Zn and Ga K edges, respectively, in a wide range of sample...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2025-04-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.7.023066 |
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