HEMT Noise Modeling for D Band Low Noise Amplifier Design
An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120–160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simula...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10706073/ |
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| _version_ | 1832583267838066688 |
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| author | Ao Zhang Jianjun Gao |
| author_facet | Ao Zhang Jianjun Gao |
| author_sort | Ao Zhang |
| collection | DOAJ |
| description | An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120–160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simulated results of S-parameters and noise figure show the good agreement with measured data to verify the accuracy of the proposed model. |
| format | Article |
| id | doaj-art-f139daf37d474f0b8c5b3dddc792942b |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-f139daf37d474f0b8c5b3dddc792942b2025-01-29T00:00:33ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011292893310.1109/JEDS.2024.347528910706073HEMT Noise Modeling for D Band Low Noise Amplifier DesignAo Zhang0https://orcid.org/0000-0002-1552-2763Jianjun Gao1https://orcid.org/0000-0002-9178-4773School of Microelectronics, Nantong University, Nantong, ChinaSchool of Physics and Electronic Science, East China Normal University, Shanghai, ChinaAn improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120–160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simulated results of S-parameters and noise figure show the good agreement with measured data to verify the accuracy of the proposed model.https://ieeexplore.ieee.org/document/10706073/GaAsPINdiodeequivalent circuit model |
| spellingShingle | Ao Zhang Jianjun Gao HEMT Noise Modeling for D Band Low Noise Amplifier Design IEEE Journal of the Electron Devices Society GaAs PIN diode equivalent circuit model |
| title | HEMT Noise Modeling for D Band Low Noise Amplifier Design |
| title_full | HEMT Noise Modeling for D Band Low Noise Amplifier Design |
| title_fullStr | HEMT Noise Modeling for D Band Low Noise Amplifier Design |
| title_full_unstemmed | HEMT Noise Modeling for D Band Low Noise Amplifier Design |
| title_short | HEMT Noise Modeling for D Band Low Noise Amplifier Design |
| title_sort | hemt noise modeling for d band low noise amplifier design |
| topic | GaAs PIN diode equivalent circuit model |
| url | https://ieeexplore.ieee.org/document/10706073/ |
| work_keys_str_mv | AT aozhang hemtnoisemodelingfordbandlownoiseamplifierdesign AT jianjungao hemtnoisemodelingfordbandlownoiseamplifierdesign |