HEMT Noise Modeling for D Band Low Noise Amplifier Design
An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120–160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simula...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10706073/ |
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| Summary: | An improved EEHEMT nonlinear model with noise model has been developed in this paper. Empirical formulas of bias dependent noise model parameters are given. A four-stage 120–160 GHz monolithic low-noise amplifier (LNA) fabricated with the 70nm InAlAs/InGaAs/InP HEMT technology. The simulated results of S-parameters and noise figure show the good agreement with measured data to verify the accuracy of the proposed model. |
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| ISSN: | 2168-6734 |