New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system
Using the method developed with reference to the InAs-CdTe system taking into account its condition diagram and the primary bulk physical, physical and chemical properties of the initial binary compounds (InAs, CdTe), the new materials have been obtained — solid solutions (InAs)x (CdTe)x-1. Ba...
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Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-06-01
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Series: | Омский научный вестник |
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Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/74-79%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%9A%D0%BE%D0%BF%D1%8B%D0%BB%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%9D.,%20%D0%9C%D0%B8%D1%80%D0%BE%D0%BD%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%92.%20%D0%B8%20%D0%B4%D1%80..pdf |
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author | I. A. Kirovskaya E. N. Kopylova E. V. Mironova A. O. Ekkert R. V. Ekkert O. V. Kropotin V. I. Krasheninin Yu. I. Matyash |
author_facet | I. A. Kirovskaya E. N. Kopylova E. V. Mironova A. O. Ekkert R. V. Ekkert O. V. Kropotin V. I. Krasheninin Yu. I. Matyash |
author_sort | I. A. Kirovskaya |
collection | DOAJ |
description | Using the method developed with reference to the InAs-CdTe
system taking into account its condition diagram and the primary
bulk physical, physical and chemical properties of the initial
binary compounds (InAs, CdTe), the new materials have been
obtained — solid solutions (InAs)x
(CdTe)x-1.
Based on the results of X-ray studies in combination with the
results of micro-, electron-microscopic studies, the obtained solid
solutions are certified as substitution solid solution with the cubic
structure of sphalerite.
The acid-base properties of the surfaces of the InAs-CdTe system
components have been studied: the pH values of the isoelectric
state — pHiso — have been found, indicating that the surfaces
belong to a weak-acid region (pHiso<7).
The interconnected patterns in changes with the composition
of the studied bulk and surface properties, respectively,
the relationship between them have been established. The
experimentally confirmed forecasts have been made concerning
the possibilities of a preliminary assessment of the nature of the
ρr
concentration dependence and the increased sensitivity of the components surfaces of the studied system to the main gases. The
practical recommendations are given on the use of the obtained
new materials as primary converters of measuring cells for trace
impurities of main gases, in particular ammonia. |
format | Article |
id | doaj-art-f0da90d70d7440a58caeb6f426b3dff6 |
institution | Kabale University |
issn | 1813-8225 2541-7541 |
language | English |
publishDate | 2020-06-01 |
publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
record_format | Article |
series | Омский научный вестник |
spelling | doaj-art-f0da90d70d7440a58caeb6f426b3dff62025-02-02T13:09:27ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412020-06-013 (171)747910.25206/1813-8225-2020-171-74-79New materials — primary converters of semiconductor measuring cells based on InAs-CdTe systemI. A. Kirovskaya0https://orcid.org/0000-0001-5926-8376E. N. Kopylova1E. V. Mironova2A. O. Ekkert3https://orcid.org/0000-0003-2452-1612R. V. Ekkert4https://orcid.org/0000-0003-4358-3421O. V. Kropotin5https://orcid.org/0000-0002-6620-9945V. I. Krasheninin6Yu. I. Matyash7Omsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityKemerovo State UniversityOmsk State Transport UniversityUsing the method developed with reference to the InAs-CdTe system taking into account its condition diagram and the primary bulk physical, physical and chemical properties of the initial binary compounds (InAs, CdTe), the new materials have been obtained — solid solutions (InAs)x (CdTe)x-1. Based on the results of X-ray studies in combination with the results of micro-, electron-microscopic studies, the obtained solid solutions are certified as substitution solid solution with the cubic structure of sphalerite. The acid-base properties of the surfaces of the InAs-CdTe system components have been studied: the pH values of the isoelectric state — pHiso — have been found, indicating that the surfaces belong to a weak-acid region (pHiso<7). The interconnected patterns in changes with the composition of the studied bulk and surface properties, respectively, the relationship between them have been established. The experimentally confirmed forecasts have been made concerning the possibilities of a preliminary assessment of the nature of the ρr concentration dependence and the increased sensitivity of the components surfaces of the studied system to the main gases. The practical recommendations are given on the use of the obtained new materials as primary converters of measuring cells for trace impurities of main gases, in particular ammonia.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/74-79%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%9A%D0%BE%D0%BF%D1%8B%D0%BB%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%9D.,%20%D0%9C%D0%B8%D1%80%D0%BE%D0%BD%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%92.%20%D0%B8%20%D0%B4%D1%80..pdfnew materialssolid solutionscrystal-chemicalstructuralacid-base propertiesinterconnected patterns of changes of the studied propertiesforecastspractical recommendationsmeasuring cells |
spellingShingle | I. A. Kirovskaya E. N. Kopylova E. V. Mironova A. O. Ekkert R. V. Ekkert O. V. Kropotin V. I. Krasheninin Yu. I. Matyash New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system Омский научный вестник new materials solid solutions crystal-chemical structural acid-base properties interconnected patterns of changes of the studied properties forecasts practical recommendations measuring cells |
title | New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system |
title_full | New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system |
title_fullStr | New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system |
title_full_unstemmed | New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system |
title_short | New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system |
title_sort | new materials primary converters of semiconductor measuring cells based on inas cdte system |
topic | new materials solid solutions crystal-chemical structural acid-base properties interconnected patterns of changes of the studied properties forecasts practical recommendations measuring cells |
url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/74-79%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%9A%D0%BE%D0%BF%D1%8B%D0%BB%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%9D.,%20%D0%9C%D0%B8%D1%80%D0%BE%D0%BD%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%92.%20%D0%B8%20%D0%B4%D1%80..pdf |
work_keys_str_mv | AT iakirovskaya newmaterialsprimaryconvertersofsemiconductormeasuringcellsbasedoninascdtesystem AT enkopylova newmaterialsprimaryconvertersofsemiconductormeasuringcellsbasedoninascdtesystem AT evmironova newmaterialsprimaryconvertersofsemiconductormeasuringcellsbasedoninascdtesystem AT aoekkert newmaterialsprimaryconvertersofsemiconductormeasuringcellsbasedoninascdtesystem AT rvekkert newmaterialsprimaryconvertersofsemiconductormeasuringcellsbasedoninascdtesystem AT ovkropotin newmaterialsprimaryconvertersofsemiconductormeasuringcellsbasedoninascdtesystem AT vikrasheninin newmaterialsprimaryconvertersofsemiconductormeasuringcellsbasedoninascdtesystem AT yuimatyash newmaterialsprimaryconvertersofsemiconductormeasuringcellsbasedoninascdtesystem |