New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system

Using the method developed with reference to the InAs-CdTe system taking into account its condition diagram and the primary bulk physical, physical and chemical properties of the initial binary compounds (InAs, CdTe), the new materials have been obtained — solid solutions (InAs)x (CdTe)x-1. Ba...

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Main Authors: I. A. Kirovskaya, E. N. Kopylova, E. V. Mironova, A. O. Ekkert, R. V. Ekkert, O. V. Kropotin, V. I. Krasheninin, Yu. I. Matyash
Format: Article
Language:English
Published: Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education 2020-06-01
Series:Омский научный вестник
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Online Access:https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/74-79%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%9A%D0%BE%D0%BF%D1%8B%D0%BB%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%9D.,%20%D0%9C%D0%B8%D1%80%D0%BE%D0%BD%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%92.%20%D0%B8%20%D0%B4%D1%80..pdf
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author I. A. Kirovskaya
E. N. Kopylova
E. V. Mironova
A. O. Ekkert
R. V. Ekkert
O. V. Kropotin
V. I. Krasheninin
Yu. I. Matyash
author_facet I. A. Kirovskaya
E. N. Kopylova
E. V. Mironova
A. O. Ekkert
R. V. Ekkert
O. V. Kropotin
V. I. Krasheninin
Yu. I. Matyash
author_sort I. A. Kirovskaya
collection DOAJ
description Using the method developed with reference to the InAs-CdTe system taking into account its condition diagram and the primary bulk physical, physical and chemical properties of the initial binary compounds (InAs, CdTe), the new materials have been obtained — solid solutions (InAs)x (CdTe)x-1. Based on the results of X-ray studies in combination with the results of micro-, electron-microscopic studies, the obtained solid solutions are certified as substitution solid solution with the cubic structure of sphalerite. The acid-base properties of the surfaces of the InAs-CdTe system components have been studied: the pH values of the isoelectric state — pHiso — have been found, indicating that the surfaces belong to a weak-acid region (pHiso<7). The interconnected patterns in changes with the composition of the studied bulk and surface properties, respectively, the relationship between them have been established. The experimentally confirmed forecasts have been made concerning the possibilities of a preliminary assessment of the nature of the ρr concentration dependence and the increased sensitivity of the components surfaces of the studied system to the main gases. The practical recommendations are given on the use of the obtained new materials as primary converters of measuring cells for trace impurities of main gases, in particular ammonia.
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institution Kabale University
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publishDate 2020-06-01
publisher Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
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spelling doaj-art-f0da90d70d7440a58caeb6f426b3dff62025-02-02T13:09:27ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412020-06-013 (171)747910.25206/1813-8225-2020-171-74-79New materials — primary converters of semiconductor measuring cells based on InAs-CdTe systemI. A. Kirovskaya0https://orcid.org/0000-0001-5926-8376E. N. Kopylova1E. V. Mironova2A. O. Ekkert3https://orcid.org/0000-0003-2452-1612R. V. Ekkert4https://orcid.org/0000-0003-4358-3421O. V. Kropotin5https://orcid.org/0000-0002-6620-9945V. I. Krasheninin6Yu. I. Matyash7Omsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityKemerovo State UniversityOmsk State Transport UniversityUsing the method developed with reference to the InAs-CdTe system taking into account its condition diagram and the primary bulk physical, physical and chemical properties of the initial binary compounds (InAs, CdTe), the new materials have been obtained — solid solutions (InAs)x (CdTe)x-1. Based on the results of X-ray studies in combination with the results of micro-, electron-microscopic studies, the obtained solid solutions are certified as substitution solid solution with the cubic structure of sphalerite. The acid-base properties of the surfaces of the InAs-CdTe system components have been studied: the pH values of the isoelectric state — pHiso — have been found, indicating that the surfaces belong to a weak-acid region (pHiso<7). The interconnected patterns in changes with the composition of the studied bulk and surface properties, respectively, the relationship between them have been established. The experimentally confirmed forecasts have been made concerning the possibilities of a preliminary assessment of the nature of the ρr concentration dependence and the increased sensitivity of the components surfaces of the studied system to the main gases. The practical recommendations are given on the use of the obtained new materials as primary converters of measuring cells for trace impurities of main gases, in particular ammonia.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/74-79%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%9A%D0%BE%D0%BF%D1%8B%D0%BB%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%9D.,%20%D0%9C%D0%B8%D1%80%D0%BE%D0%BD%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%92.%20%D0%B8%20%D0%B4%D1%80..pdfnew materialssolid solutionscrystal-chemicalstructuralacid-base propertiesinterconnected patterns of changes of the studied propertiesforecastspractical recommendationsmeasuring cells
spellingShingle I. A. Kirovskaya
E. N. Kopylova
E. V. Mironova
A. O. Ekkert
R. V. Ekkert
O. V. Kropotin
V. I. Krasheninin
Yu. I. Matyash
New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system
Омский научный вестник
new materials
solid solutions
crystal-chemical
structural
acid-base properties
interconnected patterns of changes of the studied properties
forecasts
practical recommendations
measuring cells
title New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system
title_full New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system
title_fullStr New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system
title_full_unstemmed New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system
title_short New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system
title_sort new materials primary converters of semiconductor measuring cells based on inas cdte system
topic new materials
solid solutions
crystal-chemical
structural
acid-base properties
interconnected patterns of changes of the studied properties
forecasts
practical recommendations
measuring cells
url https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/74-79%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%9A%D0%BE%D0%BF%D1%8B%D0%BB%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%9D.,%20%D0%9C%D0%B8%D1%80%D0%BE%D0%BD%D0%BE%D0%B2%D0%B0%20%D0%95.%20%D0%92.%20%D0%B8%20%D0%B4%D1%80..pdf
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