Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics
This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high cry...
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Elsevier
2025-02-01
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author | Kuat K. Kumarbekov Askhat B. Kakimov Zhakyp T. Karipbayev Murat T. Kassymzhanov Mikhail G. Brik Chong-geng Ma Michał Piasecki Yana Suchikova Meldra Kemere Marina Konuhova |
author_facet | Kuat K. Kumarbekov Askhat B. Kakimov Zhakyp T. Karipbayev Murat T. Kassymzhanov Mikhail G. Brik Chong-geng Ma Michał Piasecki Yana Suchikova Meldra Kemere Marina Konuhova |
author_sort | Kuat K. Kumarbekov |
collection | DOAJ |
description | This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high crystallinity, and minimal lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga₂O₃ emission exhibits thermal quenching above 100 K, Eu³⁺-related emissions, notably the 611 nm red emission, show thermal stability, retaining ∼90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga₂O₃:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability. |
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id | doaj-art-f0c4712c9b1a4a2db1f8942d18cfe9e7 |
institution | Kabale University |
issn | 2590-1478 |
language | English |
publishDate | 2025-02-01 |
publisher | Elsevier |
record_format | Article |
series | Optical Materials: X |
spelling | doaj-art-f0c4712c9b1a4a2db1f8942d18cfe9e72025-02-08T05:01:04ZengElsevierOptical Materials: X2590-14782025-02-0125100392Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramicsKuat K. Kumarbekov0Askhat B. Kakimov1Zhakyp T. Karipbayev2Murat T. Kassymzhanov3Mikhail G. Brik4Chong-geng Ma5Michał Piasecki6Yana Suchikova7Meldra Kemere8Marina Konuhova9Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana, 010008, KazakhstanInstitute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana, 010008, Kazakhstan; Corresponding author.Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana, 010008, Kazakhstan; Corresponding author.Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana, 010008, KazakhstanCentre of Excellence for Photoconversion, Vinča Institute of Nuclear Sciences – National Institute of the Republic of Serbia, University of Belgrade, Belgrade, Serbia; Institute of Physics, University of Tartu, Tartu, 50411, Estonia; Department of Theoretical Physics, Jan Dlugosz University, Czestochowa, Poland; Academy of Romanian Scientists, Bucharest, 050044, RomaniaSchool of Optoelectronic Engineering &CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing, 400065, ChinaDepartment of Theoretical Physics, Jan Dlugosz University, Czestochowa, PolandThe Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, 71100, Berdyansk, UkraineInstitute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, LatviaInstitute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, LatviaThis study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high crystallinity, and minimal lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga₂O₃ emission exhibits thermal quenching above 100 K, Eu³⁺-related emissions, notably the 611 nm red emission, show thermal stability, retaining ∼90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga₂O₃:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability.http://www.sciencedirect.com/science/article/pii/S2590147824001049Ga₂O₃:EuСeramicsLuminescenceElectron beam-assisted synthesis |
spellingShingle | Kuat K. Kumarbekov Askhat B. Kakimov Zhakyp T. Karipbayev Murat T. Kassymzhanov Mikhail G. Brik Chong-geng Ma Michał Piasecki Yana Suchikova Meldra Kemere Marina Konuhova Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics Optical Materials: X Ga₂O₃:Eu Сeramics Luminescence Electron beam-assisted synthesis |
title | Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics |
title_full | Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics |
title_fullStr | Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics |
title_full_unstemmed | Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics |
title_short | Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics |
title_sort | temperature dependent luminescence of europium doped ga₂o₃ ceramics |
topic | Ga₂O₃:Eu Сeramics Luminescence Electron beam-assisted synthesis |
url | http://www.sciencedirect.com/science/article/pii/S2590147824001049 |
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