Coherent potential approximation for disordered narrow-gap semiconductor superlattices
We introduce a solvable two-band model to study electron energy levels in disordered narrow-gap semiconductor superlattices within the k⋅p approach. The interaction of electrons with the impurities is accounted for by a separable pseudo-potential method that allows us to obtain closed expressions fo...
Saved in:
| Main Authors: | D. Martínez, P. L. Alcázar Ruano, Y. Baba, O. Arroyo-Gascón, F. Domínguez-Adame |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2025-06-01
|
| Series: | Frontiers in Physics |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fphy.2025.1586773/full |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Density Functional Modelling of Elastic Properties of Elemental Semiconductors
by: M. Verma, et al.
Published: (2011-01-01) -
AC-field Induced Gap Opening in the Vicinity of Extra Dirac Points in Band Structure of Graphene Superlattice
by: S.V. Kryuchkov, et al.
Published: (2016-12-01) -
Validation of the laboratory measurements at seismic frequencies using the Kramers‐Kronig relationship
by: Vassily Mikhaltsevitch, et al.
Published: (2016-05-01) -
Radiation-induced dynamical formation of Floquet-Bloch bands in Dirac Hamiltonians
by: Yuriko Baba, et al.
Published: (2025-01-01) -
The electronic band structure of hexagonal silicon polytypes
by: Chizhova Anastasia, et al.
Published: (2024-12-01)