Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime
This study examines the thermal effects on Insulated Gate Bipolar Transistors (IGBTs) in Grid-Following (GFL) and Grid-Forming (GFM) inverters under Virtual Synchronous Generator (VSG) inertia control. Using a real-time simulation on a Typhoon Hardware-in-the-Loop (HIL) platform, the research evalua...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-03-01
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| Series: | Results in Engineering |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123025003172 |
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| author | Sunjoh Christian Verbe Keigo Higashiura Md. Amit Hasan Ryuto Shigenobu Akiko Takahashi Masakazu Ito Hisao Taoka |
| author_facet | Sunjoh Christian Verbe Keigo Higashiura Md. Amit Hasan Ryuto Shigenobu Akiko Takahashi Masakazu Ito Hisao Taoka |
| author_sort | Sunjoh Christian Verbe |
| collection | DOAJ |
| description | This study examines the thermal effects on Insulated Gate Bipolar Transistors (IGBTs) in Grid-Following (GFL) and Grid-Forming (GFM) inverters under Virtual Synchronous Generator (VSG) inertia control. Using a real-time simulation on a Typhoon Hardware-in-the-Loop (HIL) platform, the research evaluates how varying inertia constants (H = 1, 4, 8 ss) influence IGBT lifespan. Results demonstrate a trade-off between frequency stability and IGBT durability. Higher inertia constants improve grid frequency stability but impose greater thermal stress and power losses, significantly reducing IGBT lifespan. For H = 1, the IGBT lifespan is 174.93 years for GFL inverters and 95.89 years for GFM inverters. At H = 4, the lifespans decrease to 37.05 years and 9.32 years, respectively. For H = 8, lifespans further drop to 9.49 years for GFL and 1.57 years for GFM. These findings highlight the critical balance between maintaining grid stability and ensuring component longevity, offering valuable guidance for optimizing inertia settings in power systems. |
| format | Article |
| id | doaj-art-f05ee322367d49d7b83822aae9ebc9f2 |
| institution | Kabale University |
| issn | 2590-1230 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Engineering |
| spelling | doaj-art-f05ee322367d49d7b83822aae9ebc9f22025-02-07T04:48:13ZengElsevierResults in Engineering2590-12302025-03-0125104231Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetimeSunjoh Christian Verbe0Keigo Higashiura1Md. Amit Hasan2Ryuto Shigenobu3Akiko Takahashi4Masakazu Ito5Hisao Taoka6Department of Advanced Interdisciplinary Science and Technology, University of Fukui, Fukui, Japan; Corresponding author at: Electrical and Electronics Engineering, University of Fukui - Bunkyo Campus, 3-9-1 Bunkyo fukui-shi Fukui, Fukui, 9108507, Japan.Department of System and Infrastructure Engineering for Safe and Sustainable Development, University of Fukui, Fukui, JapanDepartment of System and Infrastructure Engineering for Safe and Sustainable Development, University of Fukui, Fukui, JapanFaculty of Engineering, University of Fukui, Fukui, JapanFaculty of Basic and Generic Research, University of Fukui, Fukui, JapanFaculty of Engineering, University of Fukui, Fukui, JapanFaculty of Engineering Yamato University, Osaka, JapanThis study examines the thermal effects on Insulated Gate Bipolar Transistors (IGBTs) in Grid-Following (GFL) and Grid-Forming (GFM) inverters under Virtual Synchronous Generator (VSG) inertia control. Using a real-time simulation on a Typhoon Hardware-in-the-Loop (HIL) platform, the research evaluates how varying inertia constants (H = 1, 4, 8 ss) influence IGBT lifespan. Results demonstrate a trade-off between frequency stability and IGBT durability. Higher inertia constants improve grid frequency stability but impose greater thermal stress and power losses, significantly reducing IGBT lifespan. For H = 1, the IGBT lifespan is 174.93 years for GFL inverters and 95.89 years for GFM inverters. At H = 4, the lifespans decrease to 37.05 years and 9.32 years, respectively. For H = 8, lifespans further drop to 9.49 years for GFL and 1.57 years for GFM. These findings highlight the critical balance between maintaining grid stability and ensuring component longevity, offering valuable guidance for optimizing inertia settings in power systems.http://www.sciencedirect.com/science/article/pii/S2590123025003172Grid-following inverter (GFL)Grid-forming inverter (GFM)Insulated gate bipolar transistor (IGBT)Virtual Synchronous Generator (VSG)IGBT Lifetime |
| spellingShingle | Sunjoh Christian Verbe Keigo Higashiura Md. Amit Hasan Ryuto Shigenobu Akiko Takahashi Masakazu Ito Hisao Taoka Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime Results in Engineering Grid-following inverter (GFL) Grid-forming inverter (GFM) Insulated gate bipolar transistor (IGBT) Virtual Synchronous Generator (VSG) IGBT Lifetime |
| title | Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime |
| title_full | Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime |
| title_fullStr | Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime |
| title_full_unstemmed | Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime |
| title_short | Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime |
| title_sort | real time simulation comparison of the impact of inertia on grid following and grid forming inverter igbt lifetime |
| topic | Grid-following inverter (GFL) Grid-forming inverter (GFM) Insulated gate bipolar transistor (IGBT) Virtual Synchronous Generator (VSG) IGBT Lifetime |
| url | http://www.sciencedirect.com/science/article/pii/S2590123025003172 |
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