A New Method for the Extraction of Diode Parameters Using a Single Exponential Model
A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic. A specific case- the ∆V graph reducing to...
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Main Authors: | S. Dib, M. De La Bardonnie, A. Khoury, F. Pelanchon, P. Mialhe |
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Format: | Article |
Language: | English |
Published: |
Wiley
2000-01-01
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Series: | Active and Passive Electronic Components |
Subjects: | |
Online Access: | http://dx.doi.org/10.1155/2000/31390 |
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