Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor
Abstract The complementary field‐effect transistor (CFET) structure is a highly area‐efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recrystallization, which has been limiting further development. In this paper, an alternative met...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202500031 |
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