Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramics
Colossal permittivity (CP) materials, particularly co–doped TiO2 ceramics, have garnered significant attention for their potential in high–performance ceramic capacitors. However, understanding the origin of CP remains a challenge, with the role of doping ratios between acceptor and donor ions large...
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Taylor & Francis Group
2025-01-01
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| Series: | International Journal of Smart and Nano Materials |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/19475411.2025.2464574 |
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| author | Wattana Tuichai Nutthakritta Phromviyo Navadecho Chankhunthod Pornjuk Srepusharawoot Prasit Thongbai |
| author_facet | Wattana Tuichai Nutthakritta Phromviyo Navadecho Chankhunthod Pornjuk Srepusharawoot Prasit Thongbai |
| author_sort | Wattana Tuichai |
| collection | DOAJ |
| description | Colossal permittivity (CP) materials, particularly co–doped TiO2 ceramics, have garnered significant attention for their potential in high–performance ceramic capacitors. However, understanding the origin of CP remains a challenge, with the role of doping ratios between acceptor and donor ions largely underexplored. This study addresses this gap by systematically investigating the effects of Ga3+ concentrations on the microstructure and CP of GayNb0.025Ti0.975-yO2, prepared via the solid–state reaction method. The sintered ceramics exhibited a dense rutile TiO2 phase with increasing grain sizes and oxygen vacancies. Notably, CP values as high as 105 were achieved at Ga3+/Nb5+ ratio < 1.0. Optimal dielectric properties were observed at Ga3+/Nb5+ = 1.0, yielding a CP of 6.4 × 104 and a loss tangent < 0.03, surpassing the performance of many existing CP materials. Impedance spectroscopy revealed distinct electrical heterogeneity, with conductive grains and highly resistive grain boundaries with activation energies > 1.0 eV. Ceramics with 5% Ga3+ doping showed diminished CP due to the absence of semiconducting grains. The findings suggest that CP originates from the internal barrier layer capacitor. This study not only elucidates the crucial role of doping ratios in tailoring CP but also establishes a pathway for developing advanced dielectric materials with superior performance for ceramic capacitors. |
| format | Article |
| id | doaj-art-efe054b67dd84e97b74209962f502cb2 |
| institution | OA Journals |
| issn | 1947-5411 1947-542X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | International Journal of Smart and Nano Materials |
| spelling | doaj-art-efe054b67dd84e97b74209962f502cb22025-08-20T01:57:04ZengTaylor & Francis GroupInternational Journal of Smart and Nano Materials1947-54111947-542X2025-01-011618410210.1080/19475411.2025.2464574Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramicsWattana Tuichai0Nutthakritta Phromviyo1Navadecho Chankhunthod2Pornjuk Srepusharawoot3Prasit Thongbai4Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandColossal permittivity (CP) materials, particularly co–doped TiO2 ceramics, have garnered significant attention for their potential in high–performance ceramic capacitors. However, understanding the origin of CP remains a challenge, with the role of doping ratios between acceptor and donor ions largely underexplored. This study addresses this gap by systematically investigating the effects of Ga3+ concentrations on the microstructure and CP of GayNb0.025Ti0.975-yO2, prepared via the solid–state reaction method. The sintered ceramics exhibited a dense rutile TiO2 phase with increasing grain sizes and oxygen vacancies. Notably, CP values as high as 105 were achieved at Ga3+/Nb5+ ratio < 1.0. Optimal dielectric properties were observed at Ga3+/Nb5+ = 1.0, yielding a CP of 6.4 × 104 and a loss tangent < 0.03, surpassing the performance of many existing CP materials. Impedance spectroscopy revealed distinct electrical heterogeneity, with conductive grains and highly resistive grain boundaries with activation energies > 1.0 eV. Ceramics with 5% Ga3+ doping showed diminished CP due to the absence of semiconducting grains. The findings suggest that CP originates from the internal barrier layer capacitor. This study not only elucidates the crucial role of doping ratios in tailoring CP but also establishes a pathway for developing advanced dielectric materials with superior performance for ceramic capacitors.https://www.tandfonline.com/doi/10.1080/19475411.2025.2464574Giant/colossal permittivityIBLCTiO2EPDDschottky barrier |
| spellingShingle | Wattana Tuichai Nutthakritta Phromviyo Navadecho Chankhunthod Pornjuk Srepusharawoot Prasit Thongbai Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramics International Journal of Smart and Nano Materials Giant/colossal permittivity IBLC TiO2 EPDD schottky barrier |
| title | Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramics |
| title_full | Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramics |
| title_fullStr | Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramics |
| title_full_unstemmed | Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramics |
| title_short | Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramics |
| title_sort | influences of ga3 doping content on microstructure and interfacial polarization in colossal permittivity gaynb0 025ti0 975 yo2 ceramics |
| topic | Giant/colossal permittivity IBLC TiO2 EPDD schottky barrier |
| url | https://www.tandfonline.com/doi/10.1080/19475411.2025.2464574 |
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