Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition
A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2018/5016435 |
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| author | Yingda Qian Yuanlan Liang Xuguang Luo Kaiyan He Wenhong Sun Hao-Hsiung Lin Devki N. Talwar Ting-Shan Chan Ian Ferguson Lingyu Wan Qingyi Yang Zhe Chuan Feng |
| author_facet | Yingda Qian Yuanlan Liang Xuguang Luo Kaiyan He Wenhong Sun Hao-Hsiung Lin Devki N. Talwar Ting-Shan Chan Ian Ferguson Lingyu Wan Qingyi Yang Zhe Chuan Feng |
| author_sort | Yingda Qian |
| collection | DOAJ |
| description | A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C. |
| format | Article |
| id | doaj-art-ef9f6515e8bd49e4b9c0c98cb9266f06 |
| institution | OA Journals |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-ef9f6515e8bd49e4b9c0c98cb9266f062025-08-20T02:22:05ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422018-01-01201810.1155/2018/50164355016435Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor DepositionYingda Qian0Yuanlan Liang1Xuguang Luo2Kaiyan He3Wenhong Sun4Hao-Hsiung Lin5Devki N. Talwar6Ting-Shan Chan7Ian Ferguson8Lingyu Wan9Qingyi Yang10Zhe Chuan Feng11College of Physical Science and Technology, Guangxi University, Nanning 530004, ChinaCollege of Physical Science and Technology, Guangxi University, Nanning 530004, ChinaCollege of Physical Science and Technology, Guangxi University, Nanning 530004, ChinaCollege of Physical Science and Technology, Guangxi University, Nanning 530004, ChinaCollege of Physical Science and Technology, Guangxi University, Nanning 530004, ChinaGraduate Institute of Electronics and Department of Electrical Engineering, National Taiwan University, Taipei 106-17, TaiwanDepartment of Physics, Indiana University of Pennsylvania, Indiana, PA 15705-1087, USANational Synchrotron Radiation Research Center, Hsinchu 300-76, TaiwanDepartment of Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, MO 65409, USACollege of Physical Science and Technology, Guangxi University, Nanning 530004, ChinaCollege of Physical Science and Technology, Guangxi University, Nanning 530004, ChinaCollege of Physical Science and Technology, Guangxi University, Nanning 530004, ChinaA series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.http://dx.doi.org/10.1155/2018/5016435 |
| spellingShingle | Yingda Qian Yuanlan Liang Xuguang Luo Kaiyan He Wenhong Sun Hao-Hsiung Lin Devki N. Talwar Ting-Shan Chan Ian Ferguson Lingyu Wan Qingyi Yang Zhe Chuan Feng Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition Advances in Materials Science and Engineering |
| title | Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition |
| title_full | Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition |
| title_fullStr | Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition |
| title_full_unstemmed | Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition |
| title_short | Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition |
| title_sort | synchrotron radiation x ray absorption spectroscopy and spectroscopic ellipsometry studies of insb thin films on gaas grown by metalorganic chemical vapor deposition |
| url | http://dx.doi.org/10.1155/2018/5016435 |
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