Improvement of Material Removal Rate and Within Wafer Non-Uniformity in Chemical Mechanical Polishing Using Computational Fluid Dynamic Modeling
Chemical mechanical polishing (CMP) is a widely used technique in semiconductor manufacturing to achieve a flat and smooth surface on silicon wafers. A key challenge in CMP is enhancing the material removal rate (MRR) while reducing within-wafer non-uniformity (WIWNU). A computational fluid dynamics...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Journal of Manufacturing and Materials Processing |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2504-4494/9/3/95 |
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