Amorphous boron nitride: synthesis, properties and device application
Abstract Amorphous boron nitride (a-BN) exhibits remarkable electrical, optical, and chemical properties, alongside robust mechanical stability, making it a compelling material for advanced applications in nanoelectronics and photonics. This review comprehensively examines the unique characteristics...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2025-05-01
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| Series: | Nano Convergence |
| Online Access: | https://doi.org/10.1186/s40580-025-00486-1 |
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| author | Seyed Mehdi Sattari-Esfahlan Saeed Mirzaei Mukkath Joseph Josline Ji-Yun Moon Sang-Hwa Hyun Houk Jang Jae-Hyun Lee |
| author_facet | Seyed Mehdi Sattari-Esfahlan Saeed Mirzaei Mukkath Joseph Josline Ji-Yun Moon Sang-Hwa Hyun Houk Jang Jae-Hyun Lee |
| author_sort | Seyed Mehdi Sattari-Esfahlan |
| collection | DOAJ |
| description | Abstract Amorphous boron nitride (a-BN) exhibits remarkable electrical, optical, and chemical properties, alongside robust mechanical stability, making it a compelling material for advanced applications in nanoelectronics and photonics. This review comprehensively examines the unique characteristics of a-BN, emphasizing its electrical and optical attributes, state-of-the-art synthesis techniques, and device applications. Key advancements in low-temperature growth methods for a-BN are highlighted, offering insights into their potential for integration into scalable, CMOS-compatible platforms. Additionally, the review discusses the emerging role of a-BN as a dielectric material in electronic and photonic devices, serving as substrates, encapsulation layers, and gate insulators. Finally, perspectives on future challenges, including defect control, interface engineering, and scalability, are presented, providing a roadmap for realizing the full potential of a-BN in next-generation device technologies. Graphical Abstract |
| format | Article |
| id | doaj-art-ef17ffbfa8854e51824ae5fd7c15b9c1 |
| institution | DOAJ |
| issn | 2196-5404 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano Convergence |
| spelling | doaj-art-ef17ffbfa8854e51824ae5fd7c15b9c12025-08-20T02:55:27ZengSpringerOpenNano Convergence2196-54042025-05-0112112210.1186/s40580-025-00486-1Amorphous boron nitride: synthesis, properties and device applicationSeyed Mehdi Sattari-Esfahlan0Saeed Mirzaei1Mukkath Joseph Josline2Ji-Yun Moon3Sang-Hwa Hyun4Houk Jang5Jae-Hyun Lee6Institute for MicroelectronicsCEITEC BUT, Brno University of TechnologyDepartment of Energy Systems Research, Ajou UniversityDepartment of Mechanical Engineering and Materials Science, Washington University in St. LouisDepartment of Electrical and Computer Engineering, Sungkyunkwan UniversityCenter for Functional Nanomaterials, Brookhaven National LaboratoryDepartment of Electrical and Computer Engineering, Sungkyunkwan UniversityAbstract Amorphous boron nitride (a-BN) exhibits remarkable electrical, optical, and chemical properties, alongside robust mechanical stability, making it a compelling material for advanced applications in nanoelectronics and photonics. This review comprehensively examines the unique characteristics of a-BN, emphasizing its electrical and optical attributes, state-of-the-art synthesis techniques, and device applications. Key advancements in low-temperature growth methods for a-BN are highlighted, offering insights into their potential for integration into scalable, CMOS-compatible platforms. Additionally, the review discusses the emerging role of a-BN as a dielectric material in electronic and photonic devices, serving as substrates, encapsulation layers, and gate insulators. Finally, perspectives on future challenges, including defect control, interface engineering, and scalability, are presented, providing a roadmap for realizing the full potential of a-BN in next-generation device technologies. Graphical Abstracthttps://doi.org/10.1186/s40580-025-00486-1 |
| spellingShingle | Seyed Mehdi Sattari-Esfahlan Saeed Mirzaei Mukkath Joseph Josline Ji-Yun Moon Sang-Hwa Hyun Houk Jang Jae-Hyun Lee Amorphous boron nitride: synthesis, properties and device application Nano Convergence |
| title | Amorphous boron nitride: synthesis, properties and device application |
| title_full | Amorphous boron nitride: synthesis, properties and device application |
| title_fullStr | Amorphous boron nitride: synthesis, properties and device application |
| title_full_unstemmed | Amorphous boron nitride: synthesis, properties and device application |
| title_short | Amorphous boron nitride: synthesis, properties and device application |
| title_sort | amorphous boron nitride synthesis properties and device application |
| url | https://doi.org/10.1186/s40580-025-00486-1 |
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