External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots
Based on the effective-mass approximation and variational procedure, the ground-state donor binding energy in a cylindrical zinc-blende InxGa1-xN/GaN symmetric coupled quantum dots (SCQDs) is investigated in the presence of the external electric field. Numerical results show that the donor binding e...
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Wiley
2017-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2017/5652763 |
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| author | Guang-Xin Wang Li-Li Zhang Huan Wei |
| author_facet | Guang-Xin Wang Li-Li Zhang Huan Wei |
| author_sort | Guang-Xin Wang |
| collection | DOAJ |
| description | Based on the effective-mass approximation and variational procedure, the ground-state donor binding energy in a cylindrical zinc-blende InxGa1-xN/GaN symmetric coupled quantum dots (SCQDs) is investigated in the presence of the external electric field. Numerical results show that the donor binding energy increases firstly until a maximum value, and then it begins to drop quickly in all the cases with decreasing the dot radius. As the thickness of left dot and right dot decreases, the donor binding energy increases monotonically at first, reaches a maximum value, and then drops rapidly for an impurity ion located at the right dot center and the middle barrier center. Moreover, the donor binding energy for an impurity ion located at the center of the left dot is insensitive to the variation of dot thickness for large dot thickness due to the Stark effect. Meanwhile, the impurity position plays an important role on the change of the donor binding energy under the external electric field. In particular, the impurity position corresponding to the peak value of the donor binding energy is shifted toward the left QD with increasing the external electric field strength. |
| format | Article |
| id | doaj-art-eeec64ea99b643fa9229d8bba04bf99d |
| institution | DOAJ |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | Wiley |
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| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-eeec64ea99b643fa9229d8bba04bf99d2025-08-20T03:21:15ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242017-01-01201710.1155/2017/56527635652763External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum DotsGuang-Xin Wang0Li-Li Zhang1Huan Wei2College of Science, North China University of Science and Technology, Tangshan 063000, ChinaPublishing Management Center, North China University of Science and Technology, Tangshan 063000, ChinaCollege of Science, North China University of Science and Technology, Tangshan 063000, ChinaBased on the effective-mass approximation and variational procedure, the ground-state donor binding energy in a cylindrical zinc-blende InxGa1-xN/GaN symmetric coupled quantum dots (SCQDs) is investigated in the presence of the external electric field. Numerical results show that the donor binding energy increases firstly until a maximum value, and then it begins to drop quickly in all the cases with decreasing the dot radius. As the thickness of left dot and right dot decreases, the donor binding energy increases monotonically at first, reaches a maximum value, and then drops rapidly for an impurity ion located at the right dot center and the middle barrier center. Moreover, the donor binding energy for an impurity ion located at the center of the left dot is insensitive to the variation of dot thickness for large dot thickness due to the Stark effect. Meanwhile, the impurity position plays an important role on the change of the donor binding energy under the external electric field. In particular, the impurity position corresponding to the peak value of the donor binding energy is shifted toward the left QD with increasing the external electric field strength.http://dx.doi.org/10.1155/2017/5652763 |
| spellingShingle | Guang-Xin Wang Li-Li Zhang Huan Wei External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots Advances in Condensed Matter Physics |
| title | External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots |
| title_full | External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots |
| title_fullStr | External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots |
| title_full_unstemmed | External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots |
| title_short | External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots |
| title_sort | external electric field effect on shallow donor impurity states in zinc blende inxga1 xn gan symmetric coupled quantum dots |
| url | http://dx.doi.org/10.1155/2017/5652763 |
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