Simulation Study on the Open-Circuit Voltage of Amorphous Silicon p-i-n Solar Cells Using AMPS-1D
AMPS-1D (Analysis of Microelectronic and Photonic Structure) simulation program was used to simulate Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics was in a good agreement with experimental values. The dependence of the open-circuit vo...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2014-04-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/1/articles/jnep_2014_V6_01006.pdf |
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| Summary: | AMPS-1D (Analysis of Microelectronic and Photonic Structure) simulation program was used to simulate Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics was in a good agreement with experimental values. The dependence of the open-circuit voltage on the characteristics of the a-Si:H intrinsic layer was investigated. The simulation result shows that the open-circuit voltage does not depend on the thickness of the intrinsic layer. The open-circuit voltage decreases when the front contact barrier height is small or the energy gap of the intrinsic layer is small. The open-circuit voltage increases when the distribution of the tail states is sharp or the capture cross sections of these states are small. |
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| ISSN: | 2077-6772 |