Origin of the inhomogeneous nanoscale resistivity in chromium doped V2O3

Origin of the inhomogeneous nanoscale resistivity in chromium doped V2O3

Abstract Chromium doped V2O3 polycrystalline thin films typically consist of conductive grains separated by insulating grain boundaries. We investigate the origin of the spatially inhomogeneous resistivity in these films and find no qualitative differences between doped and undoped films, or for dif...

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Bibliographic Details
Main Authors: Johannes Mohr, Yudi Wang, Xiaoyu Xu, Ruilin Wang, Dirk J. Wouters, Rainer Waser, Joyeeta Nag, Daniel Bedau
Format: Article
Language:English
Published: Nature Portfolio 2025-05-01
Series:Scientific Reports
Subjects:
Doped V2O3
Grain boundaries
Conductive AFM
Mott-insulators
Online Access:https://doi.org/10.1038/s41598-025-99892-y
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