Optical Properties of Indium Doeped ZnO Nanowires
We report the synthesis of the ZnO nanowires (NWs) with different indium concentrations by using the thermal evaporation method. The gold nanoparticles were used as the catalyst and were dispersed on the silicon wafer to facilitate the growth of the ZnO NWs. High resolution transmission electron mic...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/760376 |
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| author | Tsung-Shine Ko Sin-Liang Ou Kuo-Sheng Kao Tz-Min Yang Der-Yuh Lin |
| author_facet | Tsung-Shine Ko Sin-Liang Ou Kuo-Sheng Kao Tz-Min Yang Der-Yuh Lin |
| author_sort | Tsung-Shine Ko |
| collection | DOAJ |
| description | We report the synthesis of the ZnO nanowires (NWs) with different indium concentrations by using the thermal evaporation method. The gold nanoparticles were used as the catalyst and were dispersed on the silicon wafer to facilitate the growth of the ZnO NWs. High resolution transmission electron microscopy confirms that the ZnO NWs growth relied on vapor-liquid-solid mechanism and energy dispersion spectrum detects the atomic percentages of indium in ZnO NWs. Scanning electron microscopy shows that the diameters of pure ZnO NWs range from 20 to 30 nm and the diameters of ZnO:In were increased to 50–80 nm with increasing indium doping level. X-ray diffraction results point out that the crystal quality of the ZnO NWs was worse with doping higher indium concentration. Photoluminescence (PL) study of the ZnO NWs exhibited main photoemission at 380 nm due to the recombination of excitons in near-band-edge (NBE). In addition, PL results also indicate the slightly blue shift and PL intensity decreasing of NBE emission from the ZnO NWs with higher indium concentrations could be attributed to more donor-induced trap center generations. |
| format | Article |
| id | doaj-art-ede8a47bc4f34a6f9b386345ef562021 |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-ede8a47bc4f34a6f9b386345ef5620212025-08-20T02:21:42ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/760376760376Optical Properties of Indium Doeped ZnO NanowiresTsung-Shine Ko0Sin-Liang Ou1Kuo-Sheng Kao2Tz-Min Yang3Der-Yuh Lin4Department of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, TaiwanDepartment of Computer and Communication, SHU-TE University, Kaohsiung 824, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, TaiwanDepartment of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, TaiwanWe report the synthesis of the ZnO nanowires (NWs) with different indium concentrations by using the thermal evaporation method. The gold nanoparticles were used as the catalyst and were dispersed on the silicon wafer to facilitate the growth of the ZnO NWs. High resolution transmission electron microscopy confirms that the ZnO NWs growth relied on vapor-liquid-solid mechanism and energy dispersion spectrum detects the atomic percentages of indium in ZnO NWs. Scanning electron microscopy shows that the diameters of pure ZnO NWs range from 20 to 30 nm and the diameters of ZnO:In were increased to 50–80 nm with increasing indium doping level. X-ray diffraction results point out that the crystal quality of the ZnO NWs was worse with doping higher indium concentration. Photoluminescence (PL) study of the ZnO NWs exhibited main photoemission at 380 nm due to the recombination of excitons in near-band-edge (NBE). In addition, PL results also indicate the slightly blue shift and PL intensity decreasing of NBE emission from the ZnO NWs with higher indium concentrations could be attributed to more donor-induced trap center generations.http://dx.doi.org/10.1155/2015/760376 |
| spellingShingle | Tsung-Shine Ko Sin-Liang Ou Kuo-Sheng Kao Tz-Min Yang Der-Yuh Lin Optical Properties of Indium Doeped ZnO Nanowires International Journal of Photoenergy |
| title | Optical Properties of Indium Doeped ZnO Nanowires |
| title_full | Optical Properties of Indium Doeped ZnO Nanowires |
| title_fullStr | Optical Properties of Indium Doeped ZnO Nanowires |
| title_full_unstemmed | Optical Properties of Indium Doeped ZnO Nanowires |
| title_short | Optical Properties of Indium Doeped ZnO Nanowires |
| title_sort | optical properties of indium doeped zno nanowires |
| url | http://dx.doi.org/10.1155/2015/760376 |
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