Low interface state density and large capacitive memory window using RF sputtered NiO nanoparticles decorated MgZnO thin film
Abstract NiO nanoparticles (NPs) synthesized using glancing angle deposition (GLAD) technique over MgZnO thin film was used to design a novel memory device. The NiO NPs with average diameter ~ 9.5 nm was uniformly distributed over the MgZnO thin film surface. The MgZnO thin film/NiO NPs memory devic...
Saved in:
Main Authors: | Mritunjay Kumar, Jay Chandra Dhar |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2025-01-01
|
Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-025-86395-z |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Synthesis, Characterization, Optical and Dielectric Properties of NiO and Zn-Doped NiO Nanostructures: Toward Advanced Applications
by: Atizaz Ali, et al.
Published: (2024-01-01) -
Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes
by: Roumen Nedev, et al.
Published: (2025-01-01) -
Surface and Catalytic Properties of NiO–FeO Solids Supported on AlO
by: G.A. El-Shobaky, et al.
Published: (1996-10-01) -
Photodegradation of Rhodamine B in Presence of CaO and NiO-CaO Catalysts
by: Tobias Kornprobst, et al.
Published: (2012-01-01) -
Electrical Properties of RF Sputtered NiCr Thin Film Resistors With Cu Contacts
by: N. M. Devashrayee, et al.
Published: (1983-01-01)