Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication

Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication

This study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process. The key innovation of this work lies in simplifying the fabrication process by utilizin...

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Bibliographic Details
Main Authors: Yinmiao Yin, Qian Fan, Xianfeng Ni, Chao Guo, Xing Gu
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Micromachines
Subjects:
AlGaN/GaN HEMT
enhancement-mode
gate-first process
metal-insulator-semiconductor (MIS)
non-annealed ohmic contacts
Online Access:https://www.mdpi.com/2072-666X/16/4/473
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