Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor
Abstract Sliding ferroelectric semiconductors can advance the applications of slidetronics in silicon-compatible microelectronic and optoelectronic devices for the post-Moore era. However, traditional sliding ferroelectrics typically require complex artificial stacking to break symmetry, and most of...
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| Language: | English |
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Nature Portfolio
2025-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-61756-4 |
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| author | Wuhong Xue Peng Wang Wenjuan Ci Ying Guo Jingyuan Qu Zeting Zeng Tianqi Liu Ri He Shaobo Cheng Xiaohong Xu |
| author_facet | Wuhong Xue Peng Wang Wenjuan Ci Ying Guo Jingyuan Qu Zeting Zeng Tianqi Liu Ri He Shaobo Cheng Xiaohong Xu |
| author_sort | Wuhong Xue |
| collection | DOAJ |
| description | Abstract Sliding ferroelectric semiconductors can advance the applications of slidetronics in silicon-compatible microelectronic and optoelectronic devices for the post-Moore era. However, traditional sliding ferroelectrics typically require complex artificial stacking to break symmetry, and most of them lack atomic-scale evidence. Here, we report a sliding ferroelectric semiconductor of naturally parallel-stacked ReSe2 with layer number N ≥ 3 through rational sliding approach, which is different from the reported sliding ferroelectrics with N ≥ 2. This sliding ferroelectricity avoids the rigorous artificially stacking design. The origin of ferroelectricity arises from the fact that the sliding of arbitrary middle atomic layer breaks the spatial inversion symmetry. We also directly measure the polarization value of ReSe2 by polarization-electric field hysteresis. Additionally, the electro-tunable ferroelectric polarization is further confirmed by microscopic ferroelectric switching. And, the sliding ferroelectricity enables switchable ferroelectric diode and programmable photovoltaic effect. Our study sheds light on the exploration of sliding ferroelectric semiconductors in naturally parallel-stacked configurations. |
| format | Article |
| id | doaj-art-ecb40b6a27744b8b95f77acb497de17f |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-ecb40b6a27744b8b95f77acb497de17f2025-08-20T03:43:10ZengNature PortfolioNature Communications2041-17232025-07-011611810.1038/s41467-025-61756-4Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductorWuhong Xue0Peng Wang1Wenjuan Ci2Ying Guo3Jingyuan Qu4Zeting Zeng5Tianqi Liu6Ri He7Shaobo Cheng8Xiaohong Xu9Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal UniversityKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal UniversityKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal UniversityHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou UniversityKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal UniversityKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal UniversityKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal UniversityKey Laboratory of Magnetic Materials Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of SciencesHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou UniversityKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal UniversityAbstract Sliding ferroelectric semiconductors can advance the applications of slidetronics in silicon-compatible microelectronic and optoelectronic devices for the post-Moore era. However, traditional sliding ferroelectrics typically require complex artificial stacking to break symmetry, and most of them lack atomic-scale evidence. Here, we report a sliding ferroelectric semiconductor of naturally parallel-stacked ReSe2 with layer number N ≥ 3 through rational sliding approach, which is different from the reported sliding ferroelectrics with N ≥ 2. This sliding ferroelectricity avoids the rigorous artificially stacking design. The origin of ferroelectricity arises from the fact that the sliding of arbitrary middle atomic layer breaks the spatial inversion symmetry. We also directly measure the polarization value of ReSe2 by polarization-electric field hysteresis. Additionally, the electro-tunable ferroelectric polarization is further confirmed by microscopic ferroelectric switching. And, the sliding ferroelectricity enables switchable ferroelectric diode and programmable photovoltaic effect. Our study sheds light on the exploration of sliding ferroelectric semiconductors in naturally parallel-stacked configurations.https://doi.org/10.1038/s41467-025-61756-4 |
| spellingShingle | Wuhong Xue Peng Wang Wenjuan Ci Ying Guo Jingyuan Qu Zeting Zeng Tianqi Liu Ri He Shaobo Cheng Xiaohong Xu Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor Nature Communications |
| title | Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor |
| title_full | Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor |
| title_fullStr | Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor |
| title_full_unstemmed | Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor |
| title_short | Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor |
| title_sort | emergence of sliding ferroelectricity in naturally parallel stacked multilayer rese2 semiconductor |
| url | https://doi.org/10.1038/s41467-025-61756-4 |
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